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PDF NVGS3441 Data sheet ( Hoja de datos )
| Número de pieza | NVGS3441 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTGS3441, NVGS3441
Power MOSFET
1 Amp, 20 Volts, P−Channel TSOP−6
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
http://onsemi.com
1 AMPERE
20 VOLTS
RDS(on) = 90 mW
P−Channel
1256
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
VDSS
VGS
−20
"8.0
V
V
RPqdJA
ID
IDM
244
0.5
−1.65
−10
°C/W
W
A
A
RPqdJA
ID
IDM
128
1.0
−2.35
−14
°C/W
W
A
A
RPqdJA
ID
IDM
TJ, Tstg
TL
62.5
2.0
−3.3
−20
−55 to 150
260
°C/W
W
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, operating to steady state.
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
3
1
TSOP−6
CASE 318G
STYLE 1
4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
654
PT MG
G
123
Drain Drain Gate
PT = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3441T1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
NVGS3441T1G TSOP−6 3000 / Tape& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 6
1
Publication Order Number:
NTGS3441T1/D
1 page  
NTGS3441, NVGS3441
TYPICAL ELECTRICAL CHARACTERISTICS
20
16
12
8
4
0
0.01
0.10 1.00
10.00
100.00
TIME (sec)
Figure 11. Single Pulse Power
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E−04
Single Pulse
1E−03
1E−02
1E−01
1E+00
SQUARE WAVE PULSE DURATION (sec)
1E+01
1E+02
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient
1E+03
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVGS3441.PDF ] | |
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