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NTGS3441T1G PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 NTGS3441T1G
기능 Power MOSFET
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NTGS3441T1G 데이터시트, 핀배열, 회로
NTGS3441, NVGS3441
Power MOSFET
1 Amp, 20 Volts, PChannel TSOP6
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP6 Surface Mount Package
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
Power Management in Portable and BatteryPowered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
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1 AMPERE
20 VOLTS
RDS(on) = 90 mW
PChannel
1256
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current Continuous @ TA = 25°C
Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current Continuous @ TA = 25°C
Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
JunctiontoAmbient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current Continuous @ TA = 25°C
Pulsed Drain Current (Tp t 10 mS)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
VDSS
VGS
20
"8.0
V
V
RPqdJA
ID
IDM
244
0.5
1.65
10
°C/W
W
A
A
RPqdJA
ID
IDM
128
1.0
2.35
14
°C/W
W
A
A
RPqdJA
ID
IDM
TJ, Tstg
TL
62.5
2.0
3.3
20
55 to 150
260
°C/W
W
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR4 or G10 PCB, operating to steady state.
2. Mounted onto a 2square FR4 board (1 in sq, 2 oz. Cu. 0.06thick single
sided), operating to steady state.
3. Mounted onto a 2square FR4 board (1 in sq, 2 oz. Cu. 0.06thick single
sided), t t 5.0 seconds.
3
1
TSOP6
CASE 318G
STYLE 1
4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
654
PT MG
G
123
Drain Drain Gate
PT = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NTGS3441T1G TSOP6 3000 / Tape & Reel
(PbFree)
NVGS3441T1G TSOP6 3000 / Tape& Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 Rev. 6
1
Publication Order Number:
NTGS3441T1/D
NTGS3441T1G pdf, 반도체, 판매, 대치품
NTGS3441, NVGS3441
1200
900
VDS = 0 V
Ciss
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
8
6
600 Crss
Ciss
300
0
8
Coss
Crss
4 0 4 8 12 16
VGS
VDS
GATETOSOURCE OR DRAINTOSOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
20
4
Qgs
2
QT
Qgd
VDD = 20 V
ID = 3.3 A
TJ = 25°C
0
0 2 4 68
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
1.3
1.2 ID = 250 mA
1.1
1
0.9
0.8
0.7
0.6
50 25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage Variation
with Temperature
150
10
VGS = 0 V
TJ = 25°C
8
6
4
2
0
0.5 0.6 0.7 0.8 0.9 1
1.1 1.2 1.3 1.4
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
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