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NVTR01P02LT1G 데이터시트 PDF




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부품번호 NVTR01P02LT1G 기능
기능 Power MOSFET ( Transistor )
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NVTR01P02LT1G 데이터시트, 핀배열, 회로
NTR1P02L, NVTR01P02L
Power MOSFET
20 V, 1.3 A, PChannel
SOT23 Package
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are DCDC converters and power management in
portable and batterypowered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT23 Surface Mount Package Saves Board Space
NVTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
PbFree and HalideFree Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS 20 V
VGS ±12 V
IDIDM
PD
TJ, Tstg
1.3
4.0
400
55 to
150
A
A
mW
°C
Thermal Resistance JunctiontoAmbient
RqJA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
20 V
RDS(on) Max
220 mW @ 4.5 V
PChannel
D
ID Max
1.3 A
G
3
1
2
SOT23
CASE 318
STYLE 21
S
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
P02 M G
G
1
Gate
2
Source
P02 = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTR1P02LT1G
Package
Shipping
SOT23 3000 Tape & Reel
(PbFree)
NTR1P02LT3G
SOT23
(PbFree)
10,000 Tape &
Reel
NVTR01P02LT1G SOT23 3000 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 Rev. 13
1
Publication Order Number:
NTR1P02LT1/D




NVTR01P02LT1G pdf, 반도체, 판매, 대치품
NTR1P02L, NVTR01P02L
400
300
200
100
0
0
Ciss
Coss
Crss
VGS = 0 V
TJ = 25°C
5 10 15 20
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
25
100
VDD = 48 V
ID = 9 A
VGS = 4.5 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
5
QT
4
3
Qgs
2
Qgd
VDS = 16 V
1 ID = 1.5 A
TJ = 25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
QG, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
3.5
1.0
0.9
0.8
VGS = 0 V
TJ = 25°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5 1.0
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
10
1 100 ms
0.1 VGS = 12 V
Single Pulse
TC = 25°C
0.01 RDS(on) Limit
Thermal Limit
0.001 Package Limit
0.1
1
1 ms
10 ms
dc
10 100
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
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NVTR01P02LT1G

Power MOSFET ( Transistor )

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