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부품번호 | NVTR01P02LT1G 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NTR1P02L, NVTR01P02L
Power MOSFET
−20 V, −1.3 A, P−Channel
SOT−23 Package
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are DC−DC converters and power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• NVTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free and Halide−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS −20 V
VGS ±12 V
IDIDM
PD
TJ, Tstg
−1.3
−4.0
400
− 55 to
150
A
A
mW
°C
Thermal Resistance − Junction−to−Ambient
RqJA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) Max
220 mW @ −4.5 V
P−Channel
D
ID Max
−1.3 A
G
3
1
2
SOT−23
CASE 318
STYLE 21
S
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
P02 M G
G
1
Gate
2
Source
P02 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTR1P02LT1G
Package
Shipping†
SOT−23 3000 Tape & Reel
(Pb−Free)
NTR1P02LT3G
SOT−23
(Pb−Free)
10,000 Tape &
Reel
NVTR01P02LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 13
1
Publication Order Number:
NTR1P02LT1/D
NTR1P02L, NVTR01P02L
400
300
200
100
0
0
Ciss
Coss
Crss
VGS = 0 V
TJ = 25°C
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
25
100
VDD = 48 V
ID = 9 A
VGS = 4.5 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
5
QT
4
3
Qgs
2
Qgd
VDS = 16 V
1 ID = 1.5 A
TJ = 25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
3.5
1.0
0.9
0.8
VGS = 0 V
TJ = 25°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
10
1 100 ms
0.1 VGS = 12 V
Single Pulse
TC = 25°C
0.01 RDS(on) Limit
Thermal Limit
0.001 Package Limit
0.1
1
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NVTR01P02LT1G | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |