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PDF NVTFS5124PL Data sheet ( Hoja de datos )
| Número de pieza | NVTFS5124PL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVTFS5124PL
Power MOSFET
−60 V, −6 A, 260 mW, Single P−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVTFS5124PLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) J−mb (Notes 1,
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
−60
±20
−6.0
−4.0
18
9.0
−2.4
−1.7
3.0
1.5
−24
−55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = −50 V, VGS = −10 V,
IL(pk) = −13 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS
EAS
TL
−18 A
8.5 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
RYJ−mb
8.4 °C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
49.2
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) MAX
260 mW @ −10 V
380 mW @ −4.5 V
ID MAX
−6 A
P−Channel MOSFET
D (5−8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
S
S XXXX
S AYWWG
GG
D
D
D
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1
Publication Order Number:
NVTFS5124PL/D
1 page  
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
Single Pulse
00.0.100001
0.00001
0.0001
NVTFS5124PL
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
10 100 1000
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NVTFS5124PLTAG
5124
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5124PLWFTAG
24LW
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5124PLTWG
5124
WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS5124PLWFTWG
24LW
WDFN8
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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