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부품번호 | NVTR4502P 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NTR4502P, NVTR4502P
Power MOSFET
−30 V, −1.95 A, Single, P−Channel,
SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• Low RDS(ON) for Low Conduction Losses
• SOT−23 Surface Mount for Small Footprint (3 X 3 mm)
• AEC Q101 Qualified − NVTR4502P
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC to DC Conversion
• Load/Power Switch for Portables and Computing
• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
• Battery Charging Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Power Dissipation
(Note 1)
t < 10 s TA = 25°C
TA = 70°C
t < 10 s
VDSS
VGS
ID
PD
−30
±20
−1.95
−1.56
1.25
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 70°C
Steady State
ID
PD
−1.13
−0.90
0.4
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−6.8
−55 to
150
−1.25
260
Unit
V
V
A
W
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
300 °C/W
Junction−to−Ambient – t = 10 s (Note 1)
RqJA
100
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
http://onsemi.com
V(BR)DSS
−30 V
RDS(on) TYP
155 mW @ −10 V
240 mW @ −4.5 V
ID Max (Note 1)
−1.95 A
P−Channel MOSFET
S
G
D
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
TR2 M G
G
1
Gate
2
Source
TR2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR4502PT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
NVTR4502PT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 5
1
Publication Order Number:
NTR4502P/D
NTR4502P, NVTR4502P
500
VDS = 0 V
400 CISS
300 CRSS
VGS = 0 V
TJ = 25°C
200 CISS
COSS
100 CRSS
0
10 5
0 5 10 15 20 25
30
−VGS −VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
12
QT
10
18
15
8 12
6
QGS
4
QGD
9
6
2 ID = −1.95 A 3
TJ = 25°C
00
01234567
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
VDS = −15 V
ID = −1.95 V
VGS = −10 V
td(off)
3
TJ = 25°C
2.5
tf 2
10 tr
td(on)
1.5
1
0.5
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0.3 0.6 0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
1.2
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NVTR4502P | Power MOSFET ( Transistor ) | ON Semiconductor |
NVTR4502PT1G | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |