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PDF NVMFS5113PL Data sheet ( Hoja de datos )
| Número de pieza | NVMFS5113PL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVMFS5113PL
Power MOSFET
−60 V, 14 mW, −64 A, Single P−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• NVMFS5113PLWF − Wettable Flanks Product
• NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent
3)
RqJC
(Notes
1,
2,
Power
(Notes
Dissipation
1, 2)
RqJC
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain Cur-
rent
3)
RqJA
(Notes
1,
2,
Power
(Notes
Dissipation
1, 2)
RqJA
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
−60
"20
−64
−45
150
75
−10
−7
3.8
1.9
−415
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS −150 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 46 A, L = 0.3 mH, RG = 25 W)
EAS 315 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
RqJC
1.0 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39 °C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
−60 V
RDS(on)
14 mW @ −10 V
22 mW @ −4.5 V
S (1, 2, 3)
ID
−64 A
G (4)
P−Channel
D (5, 6)
1
DFN5
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1
Publication Order Number:
NVMFS5113PL/D
1 page  
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
NVMFS5113PL
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
10 100 1000
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NVMFS5113PLT1G
V5113L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5113PLWFT1G
5113LW
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVMFS5113PL.PDF ] | |
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