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PDF NCV8406 Data sheet ( Hoja de datos )

Número de pieza NCV8406
Descripción Self-Protected Low Side Driver
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! NCV8406 Hoja de datos, Descripción, Manual

NCV8406, NCV8406A
Self-Protected Low Side
Driver with Temperature
and Current Limit
65 V, 7.0 A, Single NChannel
NCV8406/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
These Devices are Faster than the Rest of the NCV Devices
AECQ101 Qualified and PPAP Capable
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree and are RoHS Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
http://onsemi.com
VDSS
(Clamped)
65 V
RDS(on) TYP
210 mW
ID TYP
(Limited)
7.0 A
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
Source
4
123
SOT223
CASE 318E
STYLE 3
4
MARKING
DIAGRAM
DRAIN
4
AYW
xxxxxG
G
12 3
GATE
SOURCE
DRAIN
12
3
DPAK
CASE 369C
YWW
xxxxxG
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8406 or 8406A
G or G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 2
1
Publication Order Number:
NCV8406/D

1 page




NCV8406 pdf
NCV8406, NCV8406A
TYPICAL PERFORMANCE CURVES
600
550
500
450
400
350
300
250
200
150
100
3
150°C
100°C
ID = 2 A
ID = 0.5 A
25°C
40°C
456789
VGS (V)
Figure 8. RDS(on) vs. GateSource Voltage
10
500
450 150°C, VGS = 5 V
400 150°C, VGS = 10 V
350 100°C, VGS = 5 V
300
250
200 25°C, VGS = 5 V
150 25°C, VGS = 10 V
100
50
0.5 0.75
1
1.25 1.5 1.75
100°C, VGS = 10 V
40°C, VGS = 5 V
40°C, VGS = 10 V
2 2.25 2.5 2.75 3
ID (A)
Figure 9. RDS(on) vs. Drain Current
2.5
ID = 2 A
2.0
1.5
VGS = 10 V
VGS = 5 V
1.0
0.5
40 20 0 20 40 60 80 100 120 140
T (°C)
Figure 10. Normalized RDS(on) vs. Temperature
15
VGS = 10 V
13
VDS = 10 V
11 VGS = 5 V
9
7
540 20 0 20 40 60 80 100 120 140
TJ (°C)
Figure 12. Current Limit vs. Junction
Temperature
15
13 40°C
11 25°C
9 100°C
7
150°C
5
VDS = 10 V
3
4 5 6 7 8 9 10
VGS (V)
Figure 11. Current Limit vs. GateSource
Voltage
1000
100
10
1 150°C
0.1 100°C
0.01 25°C
VGS = 0 V
0.001
40°C
0.0001
10 20 30 40 50 60 70
VDS (V)
Figure 13. DraintoSource Leakage Current
http://onsemi.com
5

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NCV8406 arduino
NCV8406, NCV8406A
PACKAGE DIMENSIONS
D
b1
4
HE
1 23
e1 e
0.08 (0003)
A1
E
b
A
SOT223 (TO261)
CASE 318E04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM MIN
NOM MAX
MIN NOM MAX
A 1.50 1.63 1.75 0.060 0.064 0.068
A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e 2.20 2.30 2.40 0.087 0.091 0.094
e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20
−−−
−−−
0.008
−−−
−−−
C L1 1.50 1.75 2.00 0.060 0.069 0.078
q
H E 6.70
7.00
7.30
0.264 0.276 0.287
q 0° 10° 0° 10°
STYLE 3:
L L1 PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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