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NCV8406A 데이터시트 PDF




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기능 Self-Protected Low Side Driver
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NCV8406A 데이터시트, 핀배열, 회로
NCV8406, NCV8406A
Self-Protected Low Side
Driver with Temperature
and Current Limit
65 V, 7.0 A, Single NChannel
NCV8406/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
These Devices are Faster than the Rest of the NCV Devices
AECQ101 Qualified and PPAP Capable
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree and are RoHS Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
http://onsemi.com
VDSS
(Clamped)
65 V
RDS(on) TYP
210 mW
ID TYP
(Limited)
7.0 A
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
Source
4
123
SOT223
CASE 318E
STYLE 3
4
MARKING
DIAGRAM
DRAIN
4
AYW
xxxxxG
G
12 3
GATE
SOURCE
DRAIN
12
3
DPAK
CASE 369C
YWW
xxxxxG
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8406 or 8406A
G or G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 2
1
Publication Order Number:
NCV8406/D




NCV8406A pdf, 반도체, 판매, 대치품
NCV8406, NCV8406A
TYPICAL PERFORMANCE CURVES
10 1000
TJstart = 25°C
100
TJstart = 25°C
TJstart = 150°C
TJstart = 150°C
1
10
100
L (mH)
Figure 2. Single Pulse Maximum Switchoff
Current vs. Load Inductance
10
10
10
100
L (mH)
Figure 3. SinglePulse Maximum Switching
Energy vs. Load Inductance
1000
TJstart = 25°C
TJstart = 25°C
1 100
TJstart = 150°C
TJstart = 150°C
0.1
1
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Switchoff Current vs. Time in Clamp
10
12
6V 7V 8V 9V
10 V
10
8 5V
4V
6 Ta = 25°C
3.3 V
4
3V
2
VGS = 2.5 V
0
0 5 10 15
VDS (V)
Figure 6. Onstate Output Characteristics
10
1 10
TIME IN CLAMP (ms)
Figure 5. SinglePulse Maximum Inductive
Switching Energy vs. Time in Clamp
12
VDS = 10 V
9
6
40°C
25°C
100°C
150°C
3
0
0123 4
VGS (V)
Figure 7. Transfer Characteristics
5
http://onsemi.com
4

4페이지










NCV8406A 전자부품, 판매, 대치품
NCV8406, NCV8406A
TYPICAL PERFORMANCE CURVES
110
100
90
PCB Cu thickness, 1.0 oz
80
70
60 PCB Cu thickness, 2.0 oz
50
40
100
200 300 400 500
COPPER HEAT SPREADER AREA (mm2)
600
Figure 19. RqJA vs. Copper Area SOT223
110
100
90
80
70
PCB Cu thickness, 1.0 oz
60
50
40 100
PCB Cu thickness, 2.0 oz
200 300 400 500
COPPER HEAT SPREADER AREA (mm2)
600
Figure 20. RqJA vs. Copper Area DPAK
1000
100 50% Duty Cycle
20%
10
10%
5%
2%
1 1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 21. Transient Thermal Resistance SOT223 Version
10
100
50% Duty Cycle
10
20%
10%
5%
2%
1 1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 22. Transient Thermal Resistance DPAK Version
10
http://onsemi.com
7
100 1000
100 1000

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관련 데이터시트

부품번호상세설명 및 기능제조사
NCV8406

Self-Protected Low Side Driver

ON Semiconductor
ON Semiconductor
NCV8406A

Self-Protected Low Side Driver

ON Semiconductor
ON Semiconductor

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