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NGD18N45CLB 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NGD18N45CLB은 전자 산업 및 응용 분야에서
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부품번호 NGD18N45CLB 기능
기능 Ignition IGBT
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NGD18N45CLB 데이터시트, 핀배열, 회로
NGD18N45CLB
Ignition IGBT
18 Amps, 450 Volts
NChannel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Emitter Ballasting for ShortCircuit Capability
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VCER
VGE
IC
500 VDC
500 VDC
18 VDC
18 ADC
50 AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 400 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 Watts
0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg 55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
18 AMPS
450 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
12
3
E
4 DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
2
Collector
YWW
G18
N45BG
4
Collector
3
Emitter
G18N45B = Device Code
Y = Year
WW = Work Week
G = PbFree Device
ORDERING INFORMATION
Device
Package
Shipping
NGD18N45CLBT4G DPAK 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
NGD18N45CLB/D




NGD18N45CLB pdf, 반도체, 판매, 대치품
NGD18N45CLB
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
40
TJ = 25°C
30
VGE = 10 V
5V
4.5 V
4V
20 3.5 V
3V
10 2.5 V
0
0 1 2 34 5 67
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
8
Figure 1. Output Characteristics
60
VGE = 10 V
50
5V
40
TJ = 40°C
30
4.5 V
4V
3.5 V
20
3V
10
2.5 V
0
0 1 2 3 4 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
60
VGE = 10 V
50
40
TJ = 150°C
30
20
10
5V
4.5 V
4V
3.5 V
3V
2.5 V
0
0 1 2 3 4 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
55
50
45
40
35
30
25
20
15
10
5
0
0
VCE = 10 V
12
TJ = 40°C
TJ = 150°C
TJ = 25°C
3 45 6 78
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 4. Transfer Characteristics
4.0
3.5 IC = 25 A
3.0
IC = 20 A
IC = 15 A
2.5 IC = 10 A
2.0 IC = 5 A
1.5
1.0
0.5
0
50
25
0
VGE = 5 V
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. CollectortoEmitter Saturation
Voltage vs. Junction Temperature
3.5
3.0
2.5 IC = 15 A
2.0 IC = 10 A
IC = 5 A
1.5
TJ = 25°C
1.0
0.5
0
4 5 6 7 8 9 10
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 6. CollectortoEmitter Voltage vs.
GatetoEmitter Voltage
http://onsemi.com
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NGD18N45CLB 전자부품, 판매, 대치품
100
Duty Cycle = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
NGD18N45CLB
0.1
0.01
Single Pulse
0.001
0.0001
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJA(t)
RqJC X R(t) for t 0.2 s
0.001
t,TIME (S)
0.01
0.1
Figure 19. Transient Thermal Resistance
(Nonnormalized JunctiontoAmbient mounted on minimum pad area)
1
http://onsemi.com
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