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부품번호 | NGD18N45CLB 기능 |
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기능 | Ignition IGBT | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
NGD18N45CLB
Ignition IGBT
18 Amps, 450 Volts
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
500 VDC
500 VDC
18 VDC
18 ADC
50 AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 400 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 Watts
0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
18 AMPS
450 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
12
3
E
4 DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
2
Collector
YWW
G18
N45BG
4
Collector
3
Emitter
G18N45B = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping†
NGD18N45CLBT4G DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGD18N45CLB/D
NGD18N45CLB
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
40
TJ = 25°C
30
VGE = 10 V
5V
4.5 V
4V
20 3.5 V
3V
10 2.5 V
0
0 1 2 34 5 67
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
8
Figure 1. Output Characteristics
60
VGE = 10 V
50
5V
40
TJ = −40°C
30
4.5 V
4V
3.5 V
20
3V
10
2.5 V
0
0 1 2 3 4 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
60
VGE = 10 V
50
40
TJ = 150°C
30
20
10
5V
4.5 V
4V
3.5 V
3V
2.5 V
0
0 1 2 3 4 5 678
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
55
50
45
40
35
30
25
20
15
10
5
0
0
VCE = 10 V
12
TJ = −40°C
TJ = 150°C
TJ = 25°C
3 45 6 78
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 4. Transfer Characteristics
4.0
3.5 IC = 25 A
3.0
IC = 20 A
IC = 15 A
2.5 IC = 10 A
2.0 IC = 5 A
1.5
1.0
0.5
0
−50
−25
0
VGE = 5 V
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
3.5
3.0
2.5 IC = 15 A
2.0 IC = 10 A
IC = 5 A
1.5
TJ = 25°C
1.0
0.5
0
4 5 6 7 8 9 10
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 6. Collector−to−Emitter Voltage vs.
Gate−to−Emitter Voltage
http://onsemi.com
4
4페이지 100
Duty Cycle = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
NGD18N45CLB
0.1
0.01
Single Pulse
0.001
0.0001
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
RqJC X R(t) for t ≤ 0.2 s
0.001
t,TIME (S)
0.01
0.1
Figure 19. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on minimum pad area)
1
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7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGD18N45CLB | Ignition IGBT | ON Semiconductor |
NGD18N45CLBT4G | Ignition IGBT | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |