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NGB8202ANT4G 데이터시트 PDF




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기능 Ignition IGBT
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NGB8202ANT4G 데이터시트, 핀배열, 회로
NGB8202N, NGB8202AN
Ignition IGBT
20 A, 400 V, NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
These are PbFree Devices
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
Continuous Gate Current
Transient Gate Current (t2 ms, f100 Hz)
ESD (ChargedDevice Model)
VCES
VCER
VGE
IC
IG
IG
ESD
440
440
"15
20
50
1.0
20
2.0
V
V
V
ADC
AAC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 W
1.0 W/°C
Operating & Storage Temperature Range TJ, Tstg 55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 7
1
http://onsemi.com
20 AMPS, 400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1
MARKING DIAGRAM
4
Collector
GB
8202xxG
AYWW
13
Gate
2
Emitter
Collector
GB8202xx = Device Code
xx = N or AN
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGB8202NT4G
Package
D2PAK
(PbFree)
Shipping
800/Tape & Reel
NGB8202ANT4G D2PAK 800/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8202N/D




NGB8202ANT4G pdf, 반도체, 판매, 대치품
NGB8202N, NGB8202AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
SWITCHING CHARACTERISTICS
TurnOff Delay Time (Resistive)
td(off)
Fall Time (Resistive)
tf
Test Conditions
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW, RL = 33 W,
VGE = 5.0 V
TurnOff Delay Time (Inductive)
Fall Time (Inductive)
td(off)
tf
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW,
L = 300 mH, VGE = 5.0 V
TurnOn Delay Time
Rise Time
td(on)
tr
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5 W,
VGE = 5.0 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
Min Typ Max Unit
6.0 8.0 10 mSec
6.0 8.0 10
4.0 6.0 8.0
8.0 10.5 14
3.0 5.0 7.0
5.0 7.0 9.0
1.5 3.0 4.5
5.0 7.0 10
1.0 1.5 2.0
1.0 1.5 2.0
4.0 6.0 8.0
3.0 5.0 7.0
http://onsemi.com
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NGB8202ANT4G 전자부품, 판매, 대치품
NGB8202N, NGB8202AN
100
Duty Cycle = 0.5
0.2
10 0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01 0.1
t,TIME (S)
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t 0.1 s
10 100 1000
Figure 13. Minimum Pad Transient Thermal Resistance
(Nonnormalized JunctiontoAmbient)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.000001
Single Pulse
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJC(t)
0.001
t,TIME (S)
0.01
0.1
1
Figure 14. Best Case Transient Thermal Resistance
(Nonnormalized JunctiontoCase Mounted on Cold Plate)
http://onsemi.com
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NGB8202ANT4G

Ignition IGBT

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