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부품번호 | NGB8202ANT4G 기능 |
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기능 | Ignition IGBT | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
NGB8202N, NGB8202AN
Ignition IGBT
20 A, 400 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
VCES
VCER
VGE
IC
IG
IG
ESD
440
440
"15
20
50
1.0
20
2.0
V
V
V
ADC
AAC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 W
1.0 W/°C
Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 7
1
http://onsemi.com
20 AMPS, 400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1
MARKING DIAGRAM
4
Collector
GB
8202xxG
AYWW
13
Gate
2
Emitter
Collector
GB8202xx = Device Code
xx = N or AN
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGB8202NT4G
Package
D2PAK
(Pb−Free)
Shipping†
800/Tape & Reel
NGB8202ANT4G D2PAK 800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8202N/D
NGB8202N, NGB8202AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
td(off)
Fall Time (Resistive)
tf
Test Conditions
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW, RL = 33 W,
VGE = 5.0 V
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
td(off)
tf
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW,
L = 300 mH, VGE = 5.0 V
Turn−On Delay Time
Rise Time
td(on)
tr
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5 W,
VGE = 5.0 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
Min Typ Max Unit
6.0 8.0 10 mSec
6.0 8.0 10
4.0 6.0 8.0
8.0 10.5 14
3.0 5.0 7.0
5.0 7.0 9.0
1.5 3.0 4.5
5.0 7.0 10
1.0 1.5 2.0
1.0 1.5 2.0
4.0 6.0 8.0
3.0 5.0 7.0
http://onsemi.com
4
4페이지 NGB8202N, NGB8202AN
100
Duty Cycle = 0.5
0.2
10 0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01 0.1
t,TIME (S)
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t ≤ 0.1 s
10 100 1000
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.000001
Single Pulse
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJC(t)
0.001
t,TIME (S)
0.01
0.1
1
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
http://onsemi.com
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGB8202ANT4G | Ignition IGBT | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |