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부품번호 | NGB8207BN 기능 |
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기능 | Ignition IGBT | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
NGB8207N, NGB8207BN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Minimum Avalanche Energy − 500 mJ
• Gate Resistor (RG) = 70 W
• These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
VCES
VGE
IC
IG
IG
ESD
365
$15
20
50
1.0
20
2.0
V
V
AADACC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C (Note 1)
PD 165 W
1.1 W/°C
Operating & Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 1
1
http://onsemi.com
20 AMPS, 365 VOLTS
VCE(on) = 1.5 V Typ @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1 MARKING DIAGRAM
4
Collector
NGB
8207xG
AYWW
13
Gate
2
Emitter
Collector
NGB8207x = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8207NT4G D2PAK 800 / Tape & Reel
(Pb−Free)
NGB8207BNT4G D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8207N/D
NGB8207N, NGB8207BN
TYPICAL ELECTRICAL CHARACTERISTICS
50
45
70 mS 40 A
510 mJ
40
35
30
140 mS 25.6 A
660 mJ
25
20
175 mS 21 A
675 mJ
15
10
5
0
0 50 100 150 200 250
CLAMPING TIME (mS)
Figure 1. Typical Self Clamped Inductive
Switching Performance (SCIS) @ 255C
300
2.5
2.0
VGE = 4.0 V @ TJ = −40°C
1.5
VGE = 4.0 V @ TJ = 25°C
1.0
0.5
0
VGE = 4.0 V @ TJ = 175°C
2 4 6 8 10 12 14 16 18 20 22
IC, COLLECTOR (A)
Figure 3. Collector−to−Emitter Voltage vs.
Collector Current
60
VGE = 10 V
50 5.0 V to 6.5 V
4.8 V
VGE = 4.5 V
40
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 5. On−Region Characteristics
@ TJ = 255C
40
35 mS 39.8 A
35 250 mJ
30
25
20
140 mS 16 A
400 mJ
15 230 mS 9 A
375 mJ
10
5
0
0 50 100 150 200 250
CLAMPING TIME (mS)
Figure 2. Typical Self Clamped Inductive
Switching Performance (SCIS) @ 1505C
3.0
2.5 IC = 20 A
2.0 IC = 15 A
1.5 IC = 10 A
1.0 IC = 6.0 A
IC = 8.0 A
0.5
0
−50 −25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector−to−Emitter Voltage vs.
Junction Temperature
60 VGE = 10 V
50 4.8 V to 6.5 V
4.5 V
4.2 V
40
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 6. On−Region Characteristics
@ TJ = −405C
http://onsemi.com
4
4페이지 NGB8207N, NGB8207BN
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
−B−
4
C
E
V
W
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
P
U
L
M
SOLDERING FOOTPRINT*
8.38
0.33
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
F
VIEW W−W
10.66
0.42
1.016
0.04
5.08
0.20
17.02
0.67
3.05
0.12
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Phone: 81−3−5817−1050
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7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NGB8207N/D
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGB8207BN | Ignition IGBT | ON Semiconductor |
NGB8207BNT4G | Ignition IGBT | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |