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PDF LDTD123YLT1G Data sheet ( Hoja de datos )

Número de pieza LDTD123YLT1G
Descripción Bias Resistor Transistor
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LDTD123YLT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IC
Pd
Tj
Tstg
Limits
50
5 to +12
500
200
150
55 to +150
Unit
V
V
mA
mW
C
C
LDTD123YLT1G
S-LDTD123YLT1G
3
1
2
SOT–23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD123YLT1G
S-LDTD123YLT1G
LDTD123YLT3G
S-LDTD123YLT3G
F62
F62
2.2 10 3000/Tape & Reel
2.2 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
2
56
1.54
3.6
Typ.
0.1
2.2
4.5
200
Max.
0.3
0.3
3.6
0.5
2.86
5.5
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=50mA/2.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=50mA
VCE=10V, IE= 50mA, f=100MHz
Rev.O 1/3

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