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부품번호 | LDTB143TLT1G 기능 |
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기능 | Bias Resistor Transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−40
−5
−500
200
150
−55 to +150
Unit
V
V
V
mA
mW
C
C
LDTB143TLT1G
S-LDTB143TLT1G
3
1
2
SOT-23
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB143TLT1G
S-LDTB143TLT1G
LDTB143TLT3G
S-LDTB143TLT3G
K2
K2
4.7
4.7
3000/Tape & Reel
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5 − − V IE= −50µA
Collector cutoff current
ICBO − − −0.5 µA VCB= −50V
Emitter cutoff current
IEBO − − −0.5 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA
DC current transfer ratio
hFE 100 250 600 − VCE= −5V, IC= −50mA
Input resistance
R1 3.29 4.7 6.11 kΩ
−
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ − 200 − MHz VCE= −10V, IE=50mA, f=100MHz
Rev.O 1/3
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구 성 | 총 3 페이지수 | ||
다운로드 | [ LDTB143TLT1G.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LDTB143TLT1G | Bias Resistor Transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |