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부품번호 | NRVTS245ESFT1G 기능 |
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기능 | Very Low Forward Voltage Trench-based Schottky Rectifier | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NRVTS245ESF
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 11.7 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
Typical Applications
• Switching Power Supplies including Compact Adapters and Flat
Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
• Automotive LED Lighting
http://onsemi.com
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
45 VOLTS
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
2AEMG
G
2AE = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NRVTS245ESFT1G
SOD−123
3,000/
(Pb−Free) Tape & Reel
NRVTS245ESFT3G
SOD−123
10,000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 0
1
Publication Order Number:
NRVTS245ESF/D
100
50% Duty Cycle
20%
10 10%
5%
2%
1%
1
NRVTS245ESF
TYPICAL CHARACTERISTICS
4
IPK/IAV
= 20
IPK/IAV = 10
3
IPK/IAV = 5
2
Square Wave
1 DC
0
0 0.5 1.0 1.5 2.0 2.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 8. Thermal Characteristics
1
10 100 1000
http://onsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
NRVTS245ESFT1G | Very Low Forward Voltage Trench-based Schottky Rectifier | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |