Datasheet.kr   

NRVTSM260E 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NRVTSM260E은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 NRVTSM260E 자료 제공

부품번호 NRVTSM260E 기능
기능 Surface Mount Trench Schottky Power Rectifier
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


NRVTSM260E 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 5 페이지수

미리보기를 사용할 수 없습니다

NRVTSM260E 데이터시트, 핀배열, 회로
NRVTSM260E
Surface Mount Trench
Schottky Power Rectifier
POWERMITE®
Power Surface Mount Package
Features
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Adapters & Flat Panel Displays
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics:
Powermite is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
http://onsemi.com
SCHOTTKY TRENCH
RECTIFIER
2.0 AMPERES, 60 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
MARKING DIAGRAM
M
1 AACG
2
M
AAC
G
= Date Code
= Device Code
= Pb−Free Package
(Marking Style 1)
ORDERING INFORMATION
Device
Package
Shipping
NRVTSM260ET1G Powermite 3000 / Tape &
(Pb−Free)
Reel
NRVTSM260ET3G Powermite 12000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
NRVTSM260/D




NRVTSM260E pdf, 반도체, 판매, 대치품
NRVTSM260E
TYPICAL CHARACTERISTICS
6
IPK/IAV = 20
IPK/IAV = 10
TJ = 175°C
4 IPK/IAV = 5
2
SQUARE WAVE
dc
0
0 0.5 1.0 1.5 2.0 2.5 3.0
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
50% (DUTY CYCLE)
100 20%
10%
5.0%
10 2.0%
1.0%
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
50% (DUTY CYCLE)
20%
10 10%
5.0%
2.0%
1.0%
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
http://onsemi.com
4
100 1000
100 1000

4페이지












구       성 총 5 페이지수
다운로드[ NRVTSM260E.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NRVTSM260E

Surface Mount Trench Schottky Power Rectifier

ON Semiconductor
ON Semiconductor
NRVTSM260ET1G

Surface Mount Trench Schottky Power Rectifier

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵