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부품번호 | NRVTSM260E 기능 |
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기능 | Surface Mount Trench Schottky Power Rectifier | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NRVTSM260E
Surface Mount Trench
Schottky Power Rectifier
POWERMITE®
Power Surface Mount Package
Features
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm2
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Adapters & Flat Panel Displays
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics:
• Powermite is JEDEC Registered as D0−216AA
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 16.3 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
http://onsemi.com
SCHOTTKY TRENCH
RECTIFIER
2.0 AMPERES, 60 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
MARKING DIAGRAM
M
1 AACG
2
M
AAC
G
= Date Code
= Device Code
= Pb−Free Package
(Marking Style 1)
ORDERING INFORMATION
Device
Package
Shipping†
NRVTSM260ET1G Powermite 3000 / Tape &
(Pb−Free)
Reel
NRVTSM260ET3G Powermite 12000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
NRVTSM260/D
NRVTSM260E
TYPICAL CHARACTERISTICS
6
IPK/IAV = 20
IPK/IAV = 10
TJ = 175°C
4 IPK/IAV = 5
2
SQUARE WAVE
dc
0
0 0.5 1.0 1.5 2.0 2.5 3.0
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
50% (DUTY CYCLE)
100 20%
10%
5.0%
10 2.0%
1.0%
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
50% (DUTY CYCLE)
20%
10 10%
5.0%
2.0%
1.0%
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
http://onsemi.com
4
100 1000
100 1000
4페이지 | |||
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다운로드 | [ NRVTSM260E.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NRVTSM260E | Surface Mount Trench Schottky Power Rectifier | ON Semiconductor |
NRVTSM260ET1G | Surface Mount Trench Schottky Power Rectifier | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |