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부품번호 | NRVTSA4100ET3G 기능 |
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기능 | Low Leakage Trench-based Schottky Rectifier | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NRVTSA4100E
Low Leakage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
• LED Lighting
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMA
CASE 403D
STYLE 1
TE41
AYWWG
TE41
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NRVTSA4100ET3G
SMA
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1
Publication Order Number:
NRVTSA4100E/D
NRVTSA4100E
TYPICAL CHARACTERISTICS
8
IPK/IAV
7 = 20
6
IPK/IAV = 10
IPK/IAV = 5
5
4 Square Wave
3
DC
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
100
1000
www.onsemi.com
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NRVTSA4100ET3G | Low Leakage Trench-based Schottky Rectifier | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |