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부품번호 | NRVTSAF5100E 기능 |
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기능 | Low Leakage Trench-based Schottky Rectifier | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
NRVTSS5100E,
NRVTSAF5100E
Low Leakage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
• LED Lighting
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMB
CASE 403A
AYWW
TE51G
G
SMA−FL
CASE 403AA
STYLE 6
AYWW
E51G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NRVTSS5100ET3G
Package
SMB
(Pb−Free)
Shipping†
5000 /
Tape & Reel
NRVTSAF5100ET3G SMA−FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 0
1
Publication Order Number:
NRVTSS5100E/D
NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
9
8 DC
RqJL = 24.4°C/W
7
6 Square Wave
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
Figure 7. Current Derating per Diode for
NRVTSAF5100E
18
16
IPK/IAV
= 20
14
IPK/IAV = 10
12
10
8 IPK/IAV = 5
6 Square Wave
4
2 DC
0
0 1 23 4 5 6
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Forward Power Dissipation
7
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t, PULSE TIME (S)
Figure 9. Transient Thermal Response, Junction−to−Ambient, for
NRVTSS5100E
100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
0.1
0.0000001 0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 10. Transient Thermal Response, Junction−to−Ambient, for
NRVTSAF5100E
100 1000
www.onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NRVTSAF5100E | Low Leakage Trench-based Schottky Rectifier | ON Semiconductor |
NRVTSAF5100ET3G | Low Leakage Trench-based Schottky Rectifier | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |