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NRVTSAF5100E 데이터시트 PDF




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광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 NRVTSAF5100E 기능
기능 Low Leakage Trench-based Schottky Rectifier
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NRVTSAF5100E 데이터시트, 핀배열, 회로
NRVTSS5100E,
NRVTSAF5100E
Low Leakage Trench-based
Schottky Rectifier
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree and HalideFree Devices
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMB
CASE 403A
AYWW
TE51G
G
SMAFL
CASE 403AA
STYLE 6
AYWW
E51G
G
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NRVTSS5100ET3G
Package
SMB
(PbFree)
Shipping
5000 /
Tape & Reel
NRVTSAF5100ET3G SMAFL
5000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 Rev. 0
1
Publication Order Number:
NRVTSS5100E/D




NRVTSAF5100E pdf, 반도체, 판매, 대치품
NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
9
8 DC
RqJL = 24.4°C/W
7
6 Square Wave
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
Figure 7. Current Derating per Diode for
NRVTSAF5100E
18
16
IPK/IAV
= 20
14
IPK/IAV = 10
12
10
8 IPK/IAV = 5
6 Square Wave
4
2 DC
0
0 1 23 4 5 6
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Forward Power Dissipation
7
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t, PULSE TIME (S)
Figure 9. Transient Thermal Response, JunctiontoAmbient, for
NRVTSS5100E
100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
0.1
0.0000001 0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 10. Transient Thermal Response, JunctiontoAmbient, for
NRVTSAF5100E
100 1000
www.onsemi.com
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관련 데이터시트

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NRVTSAF5100E

Low Leakage Trench-based Schottky Rectifier

ON Semiconductor
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NRVTSAF5100ET3G

Low Leakage Trench-based Schottky Rectifier

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