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부품번호 | ZXTPS718MC 기능 |
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기능 | 20V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION | ||
제조업체 | Diodes | ||
로고 | |||
전체 10 페이지수
Features and Benefits
PNP Transistor
• BVCEO > -20V
• IC = -3.5A Continuous Collector Current
• Low Saturation Voltage (-220mV max @ -1A)
• RSAT = 64mΩ for a low equivalent On-Resistance
• hFE characterized up to -6A for high current gain hold up
Schottky Diode
• BVR > 40V
• IFAV = 3A Average Peak Forward Current
• Low VF < 500mV (@1A) for reduced power loss
• Fast switching due to Schottky barrier
• Low profile 0.8mm high package for thin applications
• RθJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
A Product Line of
Diodes Incorporated
ZXTPS718MC
20V PNP LOW SATURATION TRANSISTOR AND
40V, 1A SCHOTTKY DIODE COMBINATION
Mechanical Data
• Case: DFN3020B-8
• Case Material: Molded Plastic, “Green” Molding Component
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• Charging circuits
• Mobile phones
• Motor control
• Portable applications
DFN3020B-8
Top View
Bottom View
C1 K2
K2 K2 C1 C1
B1 K2 C1
E1 A2
PNP Transistor Schottky Diode
Equivalent Circuit
A2 n/c E1 B1 Pin 1
Bottom View
Pin-Out
n/c = Not Connected internally
Ordering Information (Note 3)
Product
ZXTPS718MCTA
Marking
2S1
Reel size (inches)
7
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Tape width (mm)
8
Quantity per reel
3000
Marking Information
2S1
2S1 = Product type marking code
Top view, dot denotes pin 1
ZXTPS718MC
Document Number DS31937 Rev. 3 - 2
1 of 10
www.diodes.com
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS718MC
Schottky - Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
D = 0.5
Pulse width ≤ 300µs
t ≤ 100µs
t ≤ 10ms
Symbol
VR
IF
IFRM
IFSM
Limit
40
1.85
3
12
7
Unit
V
A
Schottky - Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 10 & 13)
(Notes 11 & 13)
(Notes 12 & 13)
(Notes 12 & 14)
(Notes 10 & 13)
(Notes 11 & 13)
(Notes 12 & 13)
(Notes 12 & 14)
Symbol
PD
RθJA
Value
1.2
12
2
20
0.9
9
1.36
13.6
83.3
51.0
111
73.5
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction to Lead
Storage Temperature Range
Maximum Junction Temperature
(Note 15)
RθJL
TSTG
TJ
20.2
-55 to +150
125
°C
Notes:
10. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed cathode and collector pads connected to each half.
11. Same as note (10), except the device is measured at t <5 sec.
12. Same as note (10), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
13. For a dual device with one active die.
14. For dual device with 2 active die running at equal power.
15. Thermal resistance from junction to solder-point (on the exposed cathode pad).
ZXTPS718MC
Document Number DS31937 Rev. 3 - 2
4 of 10
www.diodes.com
April 2011
© Diodes Incorporated
4페이지 PNP - Typical Electrical Characteristics
A Product Line of
Diodes Incorporated
ZXTPS718MC
1
Tamb=25°C
100m
I /I =100
CB
I /I =50
CB
10m
I /I =10
CB
1m 10m 100m 1
I Collector Current (A)
C
V vI
CE(SAT) C
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.10m
100°C
V =2V 630
CE
540
25°C
450
360
270
-55°C
180
90
10m 100m
1
I Collector Current (A)
C
h vI
FE C
100
0.25
0.20
I /I =50
CB
0.15
0.10
0.05
100°C
25°C
-55°C
0.010m
10m 100m
1
I Collector Current (A)
C
V vI
CE(SAT) C
10
1.0
I /I =50
CB
0.8
-55°C
0.6 25°C
100°C
0.4
1m 10m 100m
1
I Collector Current (A)
C
V vI
BE(SAT) C
10
1.0
V =2V
CE
0.8
-55°C
0.6
25°C
0.4 100°C
0.12m
10m 100m
1
I Collector Current (A)
C
V vI
BE(ON) C
10
ZXTPS718MC
Document Number DS31937 Rev. 3 - 2
7 of 10
www.diodes.com
April 2011
© Diodes Incorporated
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부품번호 | 상세설명 및 기능 | 제조사 |
ZXTPS718MC | 20V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION | Diodes |
ZXTPS718MCTA | 20V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION | Diodes |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |