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PDF NUP1301 Data sheet ( Hoja de datos )
| Número de pieza | NUP1301 | |
| Descripción | Ultra low capacitance ESD protection array | |
| Fabricantes | NXP Semiconductors | |
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NUP1301
Ultra low capacitance ESD protection array
Rev. 01 — 11 May 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
protect one signal line in rail-to-rail configuration from the damage caused by ESD
and other transients.
1.2 Features
I ESD protection of one signal line (rail-to-rail configuration)
I Ultra low diode capacitance: Cd = 0.6 pF
I Very low reverse leakage current: ≤ 30 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 11 A at tp = 8/20 µs
I AEC-Q101 qualified
1.3 Applications
I Telecommunication networks
I Video line protection
I Microcontroller protection
I I2C-bus protection
I Antenna power supply
I Analog audio
I Class-D amplifier
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRRM
repetitive peak reverse
voltage
Cd
diode capacitance
f = 1 MHz;
VR = 0 V
IR
reverse current
VR = 80 V
Min Typ Max Unit
- - 80 V
- 0.6 0.75 pF
- - 100 nA
1 page  
NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
7. Characteristics
Table 9. Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
VBR breakdown voltage
VF forward voltage
IR reverse current
Cd diode capacitance
Per device
IR = 100 µA
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 25 V
VR = 80 V
VR = 25 V;
Tj = 150 °C
VR = 80 V;
Tj = 150 °C
f = 1 MHz; VR = 0 V
100
[1]
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
- - 30
- - 100
- - 25
- - 35
- 0.6 0.75
VCL clamping voltage
IPP = 1 A
IPP = 11 A
[2][3] - - 3
[2][3] - - 20
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[3] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Unit
V
mV
mV
V
V
nA
nA
µA
µA
pF
V
V
NUP1301_1
Product data sheet
Rev. 01 — 11 May 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
13. Revision history
Table 11. Revision history
Document ID
Release date
NUP1301_1
20090511
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
NUP1301_1
Product data sheet
Rev. 01 — 11 May 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet NUP1301.PDF ] | |
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