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P6SMB150CA 데이터시트 PDF




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광범위하게 사용되는 반도체 소자입니다.


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부품번호 P6SMB150CA 기능
기능 TVS Diodes
제조업체 Littelfuse
로고 Littelfuse 로고


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P6SMB150CA 데이터시트, 핀배열, 회로
P6SMB Series
Uni-directional
TVS Diodes
Surface Mount – 600W > P6SMB series
Bi-directional
RoHS
Pb e3
Description
The P6SMB series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(TA=25OC unless otherwise noted)
Parameter
Symbol
Peak Pulse Power Dissipation at
(TFAi=g2.25)º(NCobtye
10/1000µs Waveform
1), (Note 2)
PPPM
Power Dissipation on Infinite Heat
Sink at TA=50OC
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
Only (Note 4)
Operating Junction and Storage
Temperature Range
PM(AV)
IFSM
VF
TJ, TSTG
Value
600
5.0
100
3.5V/5.0
-55 to 150
Unit
W
W
A
V
°C
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
RuJL
RuJA
20 °C/W
100 °C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above TA = 25OC per Fig. 3.
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only,duty cycle=4 per minute maximum.
4. VF<3.5V for VBR <_ 200V and VF<5.0V for VBR >_ 201V.
Functional Diagram
Bi-directional
Features
• Excellent clamping
capability
• Low incremental surge
resistance
aTybpoivceal1I2RVless than 1µA
• For surface mounted
applications to optimize
board space
• Low profile package
• T ypical failure mode is
short from over-specified
voltage or current
• W hisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
15kV(Air), 8kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2 (IEC801-2)
• EFT protection of data
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Built-in strain relief
• 600W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• V BR @TJ= VBR@25°C x (1+αT
x (TJ - 25))
(αT:Temperature Coefficient)
• Glass passivated chip
junction
• High temperature
soldering guaranteed:
260°C/40 seconds at
terminals
• Plastic package has
underwriters laboratory
flammability 94V-O
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260°C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• 2nd level interconnect is
Pb-free per IPC/JEDEC
J-STD-609A.01
Applications
TVS devices are ideal for the protection of I/O Interfaces,
CVCoCmbpuustaenr,dInodtuhsetrrivaul lannedraCbolencsiurcmueitrseulescetdroinniTcealepcpolimca,tions.
Cathode
P6SMB Series
Uni-directional
Anode
54
©2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/09/14




P6SMB150CA pdf, 반도체, 판매, 대치품
TVS Diodes
Surface Mount – 600W > P6SMB series
Ratings and Characteristic Curves (TA=25°C unless otherwise noted) (Continued)
Figure 3 - Peak Pulse Power or Current Derating Curve
vs Initial Junction Temperature
Figure 4 - Pulse Waveform
100
80
60
40
20
0
0
25 50 75 100 125 150
TA-Ambient temperature (ºC)
175
150
100
50
tr=10µsec
Peak Value
IPPM
TJ=25°C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
( )Half Value
IPPM
IPPM
2
10/1000µsec. Waveform
as defined by R.E.A
0
0
td
1.0
2.0
t-Time (ms)
3.0
4.0
Figure 5- Typical Junction Capacitance
10000
1000
100
Bi-directional V=0V
Uni-directional @VR
Uni-directional V=0V
Bi-directional @VR
10
Tj=25C
f =1.0MHz
Vsig=50mVp-p
1
1.0
10.0
100.0
VBR - Reverse Breakdown Voltage (V)
1000.0
Figure 6 - Steady State Power Dissipation Derating
Curve
6
5
4
3
2
1
0
0
25 50 75 100 125 150 175
TA - Ambient Temperature (ºC)
Figure 7- Maximum Non-Repetitive Peak Forward
Surge Current Uni-Directional Only
120
100
80
60
40
20
0
1
10
Number of Cycles at 60 Hz
100
P6SMB Series
57
©2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/09/14

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