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PDF NP70N10KUF Data sheet ( Hoja de datos )
| Número de pieza | NP70N10KUF | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP70N10KUF
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP70N10KUF-E1-AZ Note
Pure Sn (Tin)
NP70N10KUF-E2-AZ Note
Note See “TAPE INFORMATION”
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZK)
typ. 1.5 g
(TO-263)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 20 mΩ MAX. (VGS = 10 V, ID = 35 A)
• Low Ciss: Ciss = 2500 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±70
±135
A
A
Total Power Dissipation (TA = 25°C)
PT1 1.8 W
Total Power Dissipation (TC = 25°C)
PT2 120 W
Channel Temperature
Tch 175 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
Tstg −55 to +175 °C
IAS 22 A
EAS 48 mJ
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18040EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 35 A
50 Pulsed
40
30
VGS = 10 V
20
10
0
-100
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
td(on)
tr
VDD = 50 V
VGS = 10 V
RG = 0 Ω
tf
1
0.1
1 10
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
100
10
VGS = 10 V
1
0V
0.1
0
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
NP70N10KUF
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
VGS = 0 V
f = 1 MHz
Crss
10
0.01
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
90 12
80
VDD = 80 V
ID = 70 A
50 V
10
70 20 V
60 8
50 VGS
6
40
30 4
20
VDS 2
10
00
0 10 20 30 40 50
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
IF – Diode Forward Current - A
100
Data Sheet D18040EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP70N10KUF.PDF ] | |
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