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Número de pieza | BTC3415A3-0-TB-G | |
Descripción | High Voltage NPN Epitaxial Planar Transistor | |
Fabricantes | Cystech Electonics Corp | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTC3415A3-0-TB-G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC3415A3
Spec. No. : C209A3
Issued Date : 2008.01.25
Revised Date : 2014.03.06
Page No. : 1/6
Description
• High breakdown voltage. (BVCEO=300V)
• Low collector output capacitance. (Typ. 2.1pF at VCB =30V)
• Ideal for chroma circuit.
• Pb-free lead plating and halogen-free package.
Symbol
BTC3415A3
Outline
TO-92
B:Base
C:Collector
E:Emitter
ECB
Ordering Information
Device
BTC3415A3-0-TB-G
BTC3415A3-0-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTC3415A3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C209A3
Issued Date : 2008.01.25
Revised Date : 2014.03.06
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
100°C
150°C
−Temperature Max(TS max)
−Time(ts min to ts max)
150°C
60-120 seconds
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC3415A3
CYStek Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BTC3415A3-0-TB-G.PDF ] |
Número de pieza | Descripción | Fabricantes |
BTC3415A3-0-TB-G | High Voltage NPN Epitaxial Planar Transistor | Cystech Electonics Corp |
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