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부품번호 | MDF10N65B 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | MagnaChip | ||
로고 | |||
전체 6 페이지수
MDF10N65B
N-Channel MOSFET 650V, 10.0A, 1.0Ω
General Description
The MDF10N65B MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
MDF10N65B is suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 10.0A
RDS(ON) ≤ 1.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
650
±30
10.0*
5.0*
40*
47.7
0.38
15
4.5
212
-55~150
Symbol
RθJA
RθJC
Rating
62.5
2.62
Unit
V
V
A
A
A
W
W/oC
mJ
V/ns
mJ
oC
Unit
oC/W
Jun. 2010 Version 1.2
1 MagnaChip Semiconductor Ltd.
10 ※ Note : ID = 8.0A
8
6
130V
325V
520V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R
DS(on)
101
100
10 s
100 s
1 ms
10 ms
1s 100 ms
DC
10-1
10-2
10-1
Single Pulse
T =Max rated
J
TC=25℃
100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
2500
2000
1500
Coss
Ciss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
C =C
rss gd
1000
500
Crss
※ Notes ;
1. V = 0 V
GS
2. f = 1 MHz
0
1 10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
D=0.5
100
0.2
0.1
0.05
10-1 0.02
10-2
10-5
0.01
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
RΘ JC=2.62℃ /W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.10 Transient Thermal Response Curve
14000
12000
10000
single Pulse
RthJC = 2.62℃ /W
T
C
=
25℃
8000
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.11 Single Pulse Maximum Power
Dissipation
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T,
C
Case
Temperature
[℃
]
Fig.12 Maximum Drain Current vs. Case
Temperature
Jun. 2010 Version 1.2
4 MagnaChip Semiconductor Ltd.
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부품번호 | 상세설명 및 기능 | 제조사 |
MDF10N65B | N-Channel MOSFET | MagnaChip |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |