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부품번호 | STPS30L120C 기능 |
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기능 | Power Schottky rectifier | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 10 페이지수
STPS30L120C
Power Schottky rectifier
Features
■ High junction temperature capability
■ Avalanche capability specified
■ Low forward voltage drop current
■ High frequency operation
■ Insulated package: TO-220FPAB
– Insulating voltage = 1500 V rms
– Typical package capacitance 12 pF
Description
This dual center tap Schottky rectifier is suited for
high frequency switch mode power supplies.
Packaged in TO-220AB, I2PAK and TO-220FPAB,
this device provides adaptor designers with an
optimized price-performance ratio.
Figure 1. Electrical characteristics (a)
VI
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
A1
A2
K
A2
A1 K
TO-220AB
STPS30L120CT
K
A2
K
A1
TO-220FPAB
STPS30L120CFP
A2
K
A1
I2PAK
STPS30L120CR
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj(max)
VF(typ)
2 x 15 A
120 V
150 °C
0.51 V
IAR
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 13. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics.
May 2011
Doc ID 16313 Rev 3
1/10
www.st.com
10
Characteristics
STPS30L120C
Figure 6.
IM(A)
240
220
200
180
160
140
120
100
80
60
40 IM
20
0
1.E-03
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
TO-220AB, I2PAK
t
δ =0.5
1.E-02
t(s)
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Figure 7.
IM(A)
120
100
80
60
40
20 IM
0
1.E-03
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
TO220FPAB
t
δ =0.5
1.E-02
t(s)
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Figure 8.
Relative variation of thermal
Figure 9.
impedance junction to case versus
pulse duration (TO-220AB, I2PAK)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
Figure 10. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
IR(mA)
1.E+02
1.E+01
Tj=150°C
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1.E+00
Tj=125°C
Tj=100°C
1.E-01
Tj=75°C
Tj=50°C
1.E-02
1.E-03
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100 110 120
100
1
VR(V)
10 100 1000
4/10 Doc ID 16313 Rev 3
4페이지 STPS30L120C
Package information
Table 6. TO-220FPAB dimensions
Dimensions
Ref. Millimeters
Inches
L2
L3
L4
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
A
H B D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
F 0.75
1 0.030 0.039
L6
L5
D
F1
F2
F1 1.15 1.70 0.045 0.067
L7 F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4
2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ.
0.63 Typ.
F
G1
G
E L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9
3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00
3.20 0.118 0.126
Doc ID 16313 Rev 3
7/10
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
STPS30L120C | Power Schottky rectifier | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |