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Datasheet MRF166C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MRF166C | MOSFET BROADBAND RF POWER FETs SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF166C/D
The RF MOSFET Line
RF Power Field Effect Transistors
MRF166C
20 W, 500 MHz MOSFET BROADBAND RF POWER FETs
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • |  Tyco Electronics | mosfet |
| 2 | MRF166C | MOSFET BROADBAND RF POWER FETs MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF166/D
The RF MOSFET Line
RF Power Field Effect Transistors
• Low Crss — 4.5 pF @ VDS = 28 V
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C |  Motorola Semiconductors | mosfet |
| 3 | MRF166C | The RF MOSFET Line MRF166C
The RF MOSFET Line 20W, 500MHz, 28V
Designed primarily for wideband large–signal output and driver from 30– 500MHz. N–Channel enhancement mode MOSFET
M/A-COM Products
Released - Rev. 07.07
Product Image
• MRF166C — Guaranteed performance at 500 MHz, 28 Vdc
Output power = 20 W Ga |  MA-COM | mosfet |
MRF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MRF | Fast Acting Radial Lead Micro Fuse Series Type MRF
MRFD0106
EMRFD1005A1
RoHS Compliant
Fast Acting Radial Lead Micro Fuse Series
Catalog Number Ampere Rating Typical Volt-drop Melting I2T Cold @100% In < 10 mSec Resistance (ohm) (Volt) max. (A2 Sec) Melting I2T @10 In (A2 Sec) Maximum Power Dissipation (W)
MRF 50 MRF 63 MRF 80 MRF 100 MR  Bel Fuse data | | |
| 2 | MRF-261 | High Band VHF FM Power Transistor ELEFLOW
www.eleflow.com
TECHNOLOGIES
MRF261
High band/VHF FM power transistor
MRF261
Description: MRF261 is designed as 10W, 5.2dB, 12.5V, 136-175MHz, TO220 high band/VHF FM transistors. Maximum Ratings at TU = 25 Symbol BVCES BVCEO BVEBO IC Ptot TSTG TjM Data at TU = 25 Sy  Eleflow transistor | | |
| 3 | MRF10005 | The RF Line Microwave Power Transistor SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
The RF Line
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performanc  Tyco transistor | | |
| 4 | MRF10005 | MICROWAVE POWER TRANSISTOR MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed P Motorola Semiconductors transistor | | |
| 5 | MRF1000MB | MICROWAVE POWER TRANSISTORS NPN SILICON SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1000MB/D
The RF Line
Microwave Pulse Power Transistors
Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, Tyco transistor | | |
| 6 | MRF1001A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF1001A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
G
U max
2
= 11.5 dB (typ) @ 300 MHz,  Microsemi transistor | | |
| 7 | MRF1002 | MICROWAVE POWER TRANSISTOR MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1002MA/D
Microwave Pulse Power Transistors
. . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Motorola Semiconductors transistor | |
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