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Número de pieza | VUO50-18NO3 | |
Descripción | Standard Rectifier Module | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO50-18NO3
- ~~~ +
VUO50-18NO3
3~
Rectifier
VRRM =
I DAV =
I FSM =
1800 V
60 A
500 A
Features / Advantages:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: FO-F-B
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● ¼“ fast-on terminals
● Easy to mount with two screws
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130527b
1 page VUO50-18NO3
Rectifier
80
60
IF
40
[A]
20
TVJ =
125°C
150°C
0
0.4 0.6 0.8
TVJ = 25°C
1.0 1.2 1.4
VF [V]
1.6
Fig. 1 Forward current vs.
voltage drop per diode
450
50 Hz
0.8 x V RRM
1400
VR = 0 V
400 1200
350
IFSM
300
[A]
250
200
TVJ = 45°C
TVJ = 150°C
1000
I2t
800
[A2s]
600
TVJ = 45°C
400
TVJ = 150°C
150
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
200
1
t [ms]
10
Fig. 3 I2t vs. time per diode
25
20
Ptot 15
DC =
1
0.5
0.4
0.33
0.17
0.08
[W] 10
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
5
0
0 5 10 15 20 0 25 50 75 100 125 150 175
IF(AV)M [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
80
70
60
50
IF(AV)M
40
[A]
30
DC =
1
0.5
0.4
0.33
0.17
0.08
20
10
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
1.6
1.4
1.2
1.0
0.8
ZthJC
0.6
[K/W]
0.4
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.0607
2 0.1330
3 0.4305
4 0.5130
5 0.3628
ti (s)
0.00040
0.00256
0.00450
0.02420
0.18000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130527b
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet VUO50-18NO3.PDF ] |
Número de pieza | Descripción | Fabricantes |
VUO50-18NO3 | Standard Rectifier Module | IXYS Corporation |
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