|
|
PDF 55NM60ND Data sheet ( Hoja de datos )
| Número de pieza | 55NM60ND | |
| Descripción | STW55NM60ND | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 55NM60ND (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
STW55NM60ND
N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET
(with fast diode) in a TO-247 package
Datasheet — production data
Features
Type
STW55NM60ND
VDSS
(@TJmax)
650 V
RDS(on)
max
< 0.060 Ω
ID
51 A
■ The worldwide best RDS(on) amongst the fast
recovery diode devices in TO-247
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
Application
■ Switching applications
Description
This FDmesh™ II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STW55NM60ND
55NM60ND
Package
TO-247
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 14169 Rev 3
1/12
www.st.com
12
1 page  
STW55NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 51 A, VGS = 0
ISD = 51 A, VDD = 60 V
di/dt = 100 A/μs
(see Figure 16)
ISD = 51 A,VDD = 60 V
di/dt = 100 A/μs,
Tj = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
51
204
1.3
200
1.8
18
A
A
V
ns
μC
A
280 ns
3.4 μC
24 A
Doc ID 14169 Rev 3
5/12
5 Page 
STW55NM60ND
5 Revision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
16-Nov-2007
22-Apr-2008
19-Dec-2012
1 First release.
2 Document status promoted from preliminary data to datasheet.
Title changed on the cover page.
3 Minor text changes.
Updated Section 4: Package mechanical data.
Doc ID 14169 Rev 3
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 55NM60ND.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 55NM60ND | STW55NM60ND | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |