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부품번호 | P5506BDG 기능 |
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기능 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
제조업체 | Niko | ||
로고 | |||
전체 5 페이지수
NIKO-SEM
N-Channel Logic Level Enhancement
P5506BDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 55mΩ
ID
22A
D
G
1.GATE
2.DRAIN
3.SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
LIMITS
60
±20
22
18
80
50
32
-55 to 150
275
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
2.5 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
55 °C / W
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State Resistance1
ID(ON)
RDS(ON)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 8A
VGS = 10V, ID = 10A
60
1 1.5 2.5
V
±250 nA
1
µA
10
22 A
59 75
mΩ
42 55
REV 1.0
1 Aug-24-2009
NIKO-SEM
N-Channel Logic Level Enhancement
P5506BDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
1000
Safe Operating Area
Operation in This Area
is Lim ited by RDS(ON)
100 ↓
10
NOTE :
1 1.VGS= 10V
2.TC=25˚ C
3.RθJC =2.5˚ C/W
4.Single Pulse
0.1
0.1 1 10
VDS , Drain-To-Source Voltage(V)
100us
1m s
10m s
100m s
1s
DC
100
Single Pulse Maximum Power Disspation
2000
1750
1500
SINGLE PULSE
RθJC= 2.5˚ C/W
TC=25˚ C
1250
1000
750
500
250
0
0.0001
0.001
0.01
0.1
Single Pulse Time(s)
1
Transient Thermal Response Curve
10 0
D=0.5
0.2
0.1
10 -1
0.05
0.02
0.01
10 -2 single pulse
※Note :
1. Duty Factor, D=t1/ t2
2. TJM - TC=PDM*ZθJC(t)
3.Z θ JC(t)= r(t)*R θ JC(t)
PDM
t1
t2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
101
t1,Square Wave Pulse Duration[sec]
REV 1.0
4 Aug-24-2009
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ P5506BDG.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
P5506BDG | N-Channel Enhancement Mode MOSFET | UNIKC |
P5506BDG | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Niko |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |