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PDF APM2522NU Data sheet ( Hoja de datos )
| Número de pieza | APM2522NU | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM2522NU
N-Channel Enhancement Mode MOSFET
Features
• 25V/30A,
RDS(ON)=14.5mΩ (Typ.) @ VGS=10V
RDS(ON)=21.5mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
G
S
D
Top View of TO-252
D
Applications
• Power Management in Desktop Computer or
DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
APM2522N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2522N U : APM2522N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
1
www.anpec.com.tw
1 page  
APM2522NU
Typical Operating Characteristics (Cont.)
Output Characteristics
60
V = 5,6,7,8,9,10V
GS
4V
50
3.5V
40
30
3V
20
10 2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
35
30
25 V = 4.5V
GS
20
V =10V
GS
15
10
5
0 5 10 15 20 25 30
ID - Drain Current (A)
Drain-Source On Resistance
30
I =20A
D
28
26
24
22
20
18
16
14
12
10
1 2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
5
www.anpec.com.tw
5 Page 
APM2522NU
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax)
3 °C/second max.
183 °C
60-150 seconds
See Classification Temp in table 1
20** seconds
6 °C/second max.
3°C/second max.
217 °C
60-150 seconds
See Classification Temp in table 2
30** seconds
6 °C/second max.
Time 25°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<2.5 mm
235 °C
≥2.5 mm
220 °C
Volume mm3
≥350
220 °C
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<1.6 mm
260 °C
1.6 mm – 2.5 mm
260 °C
≥2.5 mm
250 °C
Volume mm3
350-2000
260 °C
250 °C
245 °C
Volume mm3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
11
www.anpec.com.tw
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet APM2522NU.PDF ] | |
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