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PDF VUO80-08NO1 Data sheet ( Hoja de datos )
| Número de pieza | VUO80-08NO1 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO80-08NO1
4/5
6 8 10
1/2
VUO80-08NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
800 V
80 A
600 A
Features / Advantages:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: V1-A-Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
1 page  
VUO80-08NO1
Rectifier
100
500
50 Hz
0.8 x V RRM
2000
VR = 0 V
80 1600
IF 60
[A] 40
400
IFSM
[A]
300
TVJ = 45°C
TVJ = 150°C
I2t
1200
[A2s]
800
TVJ = 45°C
TVJ = 150°C
TVJ =
20 125°C
150°C
TVJ = 25°C
0
0.4 0.6 0.8 1.0 1.2 1.4
VF [V]
1.6
Fig. 1 Forward current vs.
voltage drop per diode
200
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
400
1 10
t [ms]
Fig. 3 I2t vs. time per diode
32
24
Ptot
DC =
1
0.5
0.4
0.33
0.17
0.08
[W] 16
8
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
100
80
IF(AV)M 60
[A] 40
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 4 8 12 16 20 24 28 32 0
IdAVM [A]
25 50 75 100 125 150 175
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
1.2
1.0
0.8
ZthJC
0.6
[K/W]
0.4
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.0607
2 0.1230
3 0.2305
4 0.4230
5 0.2628
ti (s)
0.0004
0.00256
0.0045
0.0242
0.1800
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO80-08NO1.PDF ] | |
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