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ZXT1M322 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ZXT1M322
기능 12V PNP LOW SATURATION SWITCHING TRANSISTOR
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ZXT1M322 데이터시트, 핀배열, 회로
ZXT1M322
MPPS™ Miniature Package Power Solutions
12V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO= -12V; RSAT = 60m ; IC= -4A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
2mm x 2mm MLP
(single die)
C
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-140mV@ -1A)
hFE specified up to -10A
IC= -4A Continuous Collector Current
2mm x 2mm MLP
APPLICATIONS
DC - DC Converters (FET Driving)
Charging Circuits
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZXT1M322TA
ZXT1M322TC
REEL
7؅؅
13؅؅
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
DEVICE MARKING
S1
B
E
PINOUT
2mm x 2mm Single MLP
underside view
ISSUE 2 - JUNE 2002
1




ZXT1M322 pdf, 반도체, 판매, 대치품
ZXT1M322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -20 -35
V IC=-100A
Collector-Emitter Breakdown
Voltage
V(BR)CEO -12 -25
V IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-7.5 -8.5
V IE=-100A
-25 nA
VCB=-16V
-25 nA
VEB=-6V
-25 nA
VCES=-10V
-10
-100
-100
-195
-240
-17
-140
-150
-300
-300
mV
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1.5A, IB=-50mA*
IC=-3A, IB=-50mA*
IC=-4A, IB=-150mA*
-0.97 -1.05 V
IC=-4A, IB=-150mA*
-0.87 -0.95 V
IC=-4A, VCE=-2V*
300 475
300 450
180 275
60 100
45 70
IC=-10mA, VCE=-2V*
IC=-0.1A, VCE=-2V*
IC=-2.5A, VCE=-2V*
IC=-8A, VCE=-2V*
IC=-10A, VCE=-2V*
100 110
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
21 30 pF
70 ns
130 ns
VCB=-10V, f=1MHz
VCC=-6V, IC=-2A
IB1=IB2=-50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
ISSUE 2 - JUNE 2002
4

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ZXT1M322

12V PNP LOW SATURATION SWITCHING TRANSISTOR

Zetex Semiconductors
Zetex Semiconductors

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