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부품번호 | SPZT2222A 기능 |
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기능 | NPN Silicon Planar Epitaxial Transistor | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
PZT2222A, SPZT2222A
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
Features
• PNP Complement is PZT2907AT1
• The SOT−223 Package Can be Soldered Using Wave or Reflow
• SOT−223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints
• The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
(Open Collector)
VCEO 40 Vdc
VCBO 75 Vdc
VEBO 6.0 Vdc
Collector Current
IC 600 mAdc
Total Power Dissipation
up to TA = 25°C (Note 1)
PD W
1.5
Storage Temperature Range°
Tstg − 65 to +150 °C
Junction Temperature°
TJ 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
THERMAL CHARACTERISTICS
Rating
Symbol
Thermal Resistance,
Junction−to−Ambient
RqJA
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
TL
Value
83.3
260
10
Unit
°C/W
°C
Sec
http://onsemi.com
SOT−223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
SOT−223 (TO−261)
CASE 318E−04
STYLE 1
COLLECTOR
2, 4
BASE
1
3
EMITTER
MARKING DIAGRAM
AYM
P1FG
G
A = Assembly Location
Y = Year
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
PZT2222AT1G
SPZT2222AT1G
PZT2222AT3G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
1,000 Tape & Reel
1,000 Tape & Reel
4,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 8
1
Publication Order Number:
PZT2222AT1/D
PZT2222A, SPZT2222A
TYPICAL CHARACTERISTICS
1000
TA = 150°C
TA = 25°C
100 TA = −55°C
VCE = 6 V
10
0.1
1
10 100
IC, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain vs. Collector
Current
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
TA = 25°C
0.01 0.1 1 10
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
1.1
1.0
VCE = 2 V
0.9 TA = −55°C
0.8
0.7 TA = 25°C
0.6
0.5
0.4
TA = 150°C
0.3
0.2
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Base−Emitter Turn−On Voltage vs.
Collector Current
100
Cibo
10 Cobo
1
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 8. Capacitance
1000
100
1s
0.1
0.01
0.001
0.0001
100
100
10
Single Pulse Test at TA = 25°C
1
1 10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
100
http://onsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
SPZT2222A | NPN Silicon Planar Epitaxial Transistor | ON Semiconductor |
SPZT2222AT1G | NPN Silicon Planar Epitaxial Transistor | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |