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PDF NSVMMBT5401L Data sheet ( Hoja de datos )
| Número de pieza | NSVMMBT5401L | |
| Descripción | High Voltage Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMBT5401L, SMMBT5401L,
NSVMMBT5401L
High Voltage Transistor
PNP Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−500
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
−55 to +150
°C
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
2L M G
G
1
2L = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT5401LT1G
SMMBT5401LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
3,000 / Tape &
Reel
MMBT5401LT3G
SOT−23 10,000 / Tape &
(Pb−Free)
Reel
NSVMMBT5401LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 12
1
Publication Order Number:
MMBT5401LT1/D
1 page  
MMBT5401L, SMMBT5401L, NSVMMBT5401L
1000
700 IC/IB = 10
500 TJ = 25°C
300
200
tr @ VCC = 120 V
tr @ VCC = 30 V
100
70
50
30
20
10
0.2 0.3 0.5
td @ VBE(off) = 1.0 V
VCC = 120 V
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
100 200
1000
VCE = 1 V
TA = 25°C
100
2000
1000 IC/IB = 10
700 TJ = 25°C
500
300 tf @ VCC = 30 V
tf @ VCC = 120 V
200
ts @ VCC = 120 V
100
70
50
30
20
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 11. Turn−Off Time
1
10 mSec
0.1
1 Sec
0.01
10
0.1
1
0.001
10 100 1
IC, COLLECTOR CURRENT (A)
Figure 12. Current Gain Bandwidth Product
10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
1000
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NSVMMBT5401L.PDF ] | |
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