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PDF MMBT4401L Data sheet ( Hoja de datos )
| Número de pieza | MMBT4401L | |
| Descripción | Switching Transistor | |
| Fabricantes | ON Semiconductor | |
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MMBT4401L, SMMBT4401L
Switching Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
40 Vdc
60 Vdc
6.0 Vdc
600 mAdc
900 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2X M G
G
1
2X = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBT4401LT1G
SMMBT4401LT1G
Package
SOT−23
(Pb−Free)
Shipping†
3000 / Tape &
Reel
MMBT4401LT3G
SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 10
1
Publication Order Number:
MMBT4401LT1/D
1 page  
500
450
TJ = 150°C
400
350
25°C
300
250
200 - 55°C
150
100
50
0
0.01
MMBT4401L, SMMBT4401L
STATIC CHARACTERISTICS
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
0.1
IC, COLLECTOR CURRENT (A)
Figure 13. DC Current Gain
1
1.2
1.0
0.8
IC = 1.0 mA
0.6
0.4
0.2
0
0.001
10 mA
100 mA
300 mA
500 mA
0.01 0.1
1
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
10
100
0.35
IC/IB = 10
0.30
0.25
150°C
0.20
0.15 25°C
0.10
-55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 15. Collector−Emitter Saturation
Voltage vs. Collector Current
1
+ 0.5
0 qVC for VCE(sat)
- 0.5
- 1.0
- 1.5
- 2.0 qVB for VBE
- 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. Temperature Coefficients
500
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MMBT4401L.PDF ] | |
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