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BAW56S PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAW56S
기능 High-speed switching diodes
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BAW56S 데이터시트, 핀배열, 회로
BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV756S
SOT363 SC-88
BAW56
BAW56M
SOT23
SOT883
-
SC-101
BAW56S
SOT363 SC-88
BAW56T
BAW56W
SOT416
SOT323
SC-75
SC-70
JEDEC
-
Package
configuration
very small
TO-236AB small
- leadless ultra
small
- very small
- ultra small
- very small
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: Cd 2 pF
Reverse voltage: VR 90 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
Min Typ
VR = 80 V
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
0.5
90
4
Unit
A
V
ns




BAW56S pdf, 반도체, 판매, 대치품
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IFRM
repetitive peak forward
current
-
IFSM
Ptot
Per device
non-repetitive peak forward
current
total power dissipation
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
square wave
tp = 1 s
tp = 1 ms
tp = 1 s
Ts = 60 C
Tamb 25 C
Tamb 25 C
Ts = 60 C
Ts = 90 C
Tamb 25 C
[1]
-
-
-
[2]
-
-
[3] -
-
[4] -
-
IF
Tj
Tamb
Tstg
forward current
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
junction temperature
ambient temperature
storage temperature
Ts = 60 C
Tamb 25 C
Tamb 25 C
Ts = 60 C
Ts = 90 C
Tamb 25 C
-
-
-
-
-
-
-
65
65
Max Unit
500 mA
4A
1A
0.5 A
350 mW
250 mW
250 mW
350 mW
170 mW
200 mW
100
125
75
100
75
130
150
+150
+150
mA
mA
mA
mA
mA
mA
C
C
C
[1] Tj = 25 C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per diode
Rth(j-a)
thermal resistance from
junction to ambient
BAW56
BAW56M
BAW56W
Conditions
in free air
Min Typ Max Unit
[1]
- - 500 K/W
[2] - - 500 K/W
- - 625 K/W
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BAW56S 전자부품, 판매, 대치품
NXP Semiconductors
8. Test information
BAV756S; BAW56 series
High-speed switching diodes
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
mga881
VR
tr
10 %
tp
90 %
input signal
t
+ IF
trr
t
(1)
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I 1 kΩ
450 Ω
RS = 50 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
90 %
10 %
tr tp
input signal
V
VFR
tt
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle   0.005
Fig 6. Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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