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2SA1458 PDF 데이터시트 ( Data , Function )

부품번호 2SA1458 기능
기능 PNP Silicon Epitaxial Planar Transistor
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2SA1458 데이터시트, 핀배열, 회로
2SA1458 PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed
switching applications.
The transistor is subdivided into three groups M,
Land K, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
High frequency current gain
High speed switching
Small output capacitance
Low collector saturation voltage
Complementary to ST 2SC3731 NPN transistor
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
Value
40
40
5
200
250
150
-55 to+150
Unit
V
V
V
mA
mW
OC
OC
Page 1 of 4
7/15/2012




2SA1458 pdf, 반도체, 판매, 대치품
Base and collector saturation
voltage vs. collector current
-3
IC/IB=10
-1 VBE(sat)
-0.1
VCE(sat)
-0.01
-0.1
-1 -10
I C, mA
-100
Turn on time vs. collector current
1000
VCC= -30V
IC/IB=20
100
IC/IB=10
10
-2
-10
I C, mA
-100 -200
Storage time vs. collector current
1000
VCC= -30V
IB1= -IB2
IC/IB=10
100
IC/IB=20
10
-2
-10
I C, mA
-100 -200
Input and output capacitance
vs. reverse voltage
30
f=1MHz
IE=0(Cob)
10 IC=0(Cib)
Cib
Cob
1
0.1
-0.1
-1 -10
VCB, V
VEB V
-100 300
Rise time vs. collector current
1000
VCC= -30V
100 IC/IB=20
IC/IB=10
10
-2
-10
I C, mA
-100 -200
Fall time vs. collector current
1000
VCC= -30V
IB1= -IB2
100 IC/IB=20
IC/IB=10
10
-2
-10
I C, mA
-100 -200
Page 4 of 4
7/15/2012

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

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링크공유

링크 :

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