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IRL1404ZPbF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRL1404ZPbF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 IRL1404ZPbF 기능
기능 MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


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IRL1404ZPbF 데이터시트, 핀배열, 회로
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
PD - 95446B
IRL1404ZPbF
IRL1404ZSPbF
IRL1404ZLPbF
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 3.1mΩ
G
ID = 120A
S
TO-220AB
D2Pak
TO-262
IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
iCase-to-Sink, Flat, Greased Surface
iJunction-to-Ambient
Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
k200
k140
k120
790
230
1.5
± 16
220
490
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
06/25/12




IRL1404ZPbF pdf, 반도체, 판매, 대치품
IRL1404Z/S/LPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 75A
5.0
4.0
VDS= 32V
VDS= 20V
3.0
2.0
1.0
0.0
0
20 40 60
QG Total Gate Charge (nC)
80
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
www.irf.com

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IRL1404ZPbF 전자부품, 판매, 대치품
IRL1404Z/S/LPbF
1000
Duty Cycle = Single Pulse
100
0.01
0.05
10 0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
1
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-01
250
TOP
Single Pulse
BOTTOM 1% Duty Cycle
200 ID = 75A
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7

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