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부품번호 | FDS8958A_F085 기능 |
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기능 | Dual N & P-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
February 2010
FDS8958A_F085
Dual N & P-Channel PowerTrench® MOSFET
tm
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 30V
RDS(on) = 0.028Ω @ VGS = 10V
RDS(on) = 0.040Ω @ VGS = 4.5V
• Q2: P-Channel
-5A, -30V
RDS(on) = 0.052Ω @ VGS = -10V
RDS(on) = 0.080Ω @ VGS = -4.5V
• Fast switching speed
• High power and handling capability in a widely
used surface mount package
• Qualified to AEC Q101
• RoHS Compliant
DD1DD2DD2
DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
EAS
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A_F085
13”
©2010 Fairchild Semiconductor Corporation
FDS8958A_F085 Rev. A
1
5 Q2
6
Q1
7
8
4
3
2
1
Q1 Q2
30 30
±20 ±20
7 -5
20 -20
22
1.6 1.6
0.9 0.9
54 13
-55 to +150
Units
V
V
A
W
mJ
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
Typical Characteristics: Q1 (N-Channel)
20
VGS = 10.0V
4.0V
16
6.0V
4.5V
12
8
4
3.5V
3.0V
2.2
1.8
VGS = 3.5V
1.4 4.0
4.5V
5.0
1
6.0V
10.0V
0
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
0.6
0
4 8 12 16
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
1.6
ID = 7A
VGS = 10.0V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.08
0.07
ID = 3.5A
0.06
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = 5V
16
12
TA = 125oC
-55oC
8
25oC
4
0
1.5
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
0.001
25oC
-55oC
0.0001
4 0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A_F085 Rev. A
4
www.fairchildsemi.com
4페이지 Typical Characteristics: Q2 (P-Channel)
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * R θA
RθJA = 135 °C/W
PP((ppkk))
tt11
tt22
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 23. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958A_F085 Rev. A
7
www.fairchildsemi.com
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FDS8958A_F085 | Dual N & P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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