Datasheet.kr   

FDS8958A_F085 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDS8958A_F085은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FDS8958A_F085 자료 제공

부품번호 FDS8958A_F085 기능
기능 Dual N & P-Channel PowerTrench MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FDS8958A_F085 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

FDS8958A_F085 데이터시트, 핀배열, 회로
February 2010
FDS8958A_F085
Dual N & P-Channel PowerTrench® MOSFET
tm
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1: N-Channel
7.0A, 30V
RDS(on) = 0.028@ VGS = 10V
RDS(on) = 0.040@ VGS = 4.5V
Q2: P-Channel
-5A, -30V
RDS(on) = 0.052@ VGS = -10V
RDS(on) = 0.080@ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
Qualified to AEC Q101
RoHS Compliant
DD1DD2DD2
DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
EAS
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A_F085
13”
©2010 Fairchild Semiconductor Corporation
FDS8958A_F085 Rev. A
1
5 Q2
6
Q1
7
8
4
3
2
1
Q1 Q2
30 30
±20 ±20
7 -5
20 -20
22
1.6 1.6
0.9 0.9
54 13
-55 to +150
Units
V
V
A
W
mJ
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com




FDS8958A_F085 pdf, 반도체, 판매, 대치품
Typical Characteristics: Q1 (N-Channel)
20
VGS = 10.0V
4.0V
16
6.0V
4.5V
12
8
4
3.5V
3.0V
2.2
1.8
VGS = 3.5V
1.4 4.0
4.5V
5.0
1
6.0V
10.0V
0
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
0.6
0
4 8 12 16
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
1.6
ID = 7A
VGS = 10.0V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.08
0.07
ID = 3.5A
0.06
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = 5V
16
12
TA = 125oC
-55oC
8
25oC
4
0
1.5
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
0.001
25oC
-55oC
0.0001
4 0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A_F085 Rev. A
4
www.fairchildsemi.com

4페이지










FDS8958A_F085 전자부품, 판매, 대치품
Typical Characteristics: Q2 (P-Channel)
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * R θA
RθJA = 135 °C/W
PP((ppkk))
tt11
tt22
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 23. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958A_F085 Rev. A
7
www.fairchildsemi.com

7페이지


구       성 총 8 페이지수
다운로드[ FDS8958A_F085.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FDS8958A_F085

Dual N & P-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵