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IR21094SPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IR21094SPBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IR21094SPBF 기능
기능 HALF-BRIDGE DRIVER
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IR21094SPBF 데이터시트, 핀배열, 회로
Data Sheet No. PD60163-U
IR2109(4) (S) & (PbF)
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and programmable
up to 5us with one external RDT resistor (IR21094)
Lower di/dt gate driver for better noise immunity
Shut down input turns off both channels.
Available in Lead-Free
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
120 mA / 250 mA
VOUT
10 - 20V
ton/off (typ.)
750 & 200 ns
Dead Time
540 ns
(programmable up to 5uS for IR21094)
Packages
Description
The IR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
8 Lead SOIC
14 Lead SOIC
14 Lead PDIP
8 Lead PDIP
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
VCC
VCC
VB
IN IN HO
SD SD VS
COM
LO
IR2109
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
up to 600V
TO
LOAD
HO
VCC
VCC
VB
IN IN VS
SD SD
DT
VSS
RDT
VSS COM
LO
IR21094
up to 600V
TO
LOAD
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IR21094SPBF pdf, 반도체, 판매, 대치품
IR2109(4) (S) & (PbF)
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VSS = COM, DT= VSS and TA = 25°C unless otherwise specified. The VIL, VIH and IIN
parameters are referenced to VSS /COM and are applicable to the respective input leads: IN and SD. The VO, IO and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
VIH
VIL
VSD,TH+
VSD,TH-
VOH
VOL
ILK
IQBS
IQCC
Definition
Logic “1” input voltage for HO & logic “0” for LO
Logic “0” input voltage for HO & logic “1” for LO
SD input positive going threshold
SD input negative going threshold
High level output voltage, VBIAS - VO
Low level output voltage, VO
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
IIN+
IIN-
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCCUVH
VBSUVH
IO+
IO-
Logic “1” input bias current
Logic “0” input bias current
VCC and VBS supply undervoltage positive going
threshold
VCC and VBS supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed vurrent
Output low short circuit pulsed current
Min.
2.9
2.9
20
0.4
8.0
Typ. Max. Units Test Conditions
——
VCC = 10V to 20V
— 0.8
VCC = 10V to 20V
——
VCC = 10V to 20V
0.8 V VCC = 10V to 20V
0.8 1.4
IO = 20 mA
0.3 0.6
IO = 20 mA
— 50
75 130 µA
VB = VS = 600V
VIN = 0V or 5V
1.0 1.6 mA
VIN = 0V or 5V
RDT = 0
5 20
IN = 5V, SD = 0V
— 2 µA IN = 0V, SD = 5V
8.9 9.8
7.4 8.2 9.0
0.3 0.7 —
V
120 200
250 350
mA
VO = 0V, PW 10 µs
VO = 15V,PW 10 µs
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IR21094SPBF 전자부품, 판매, 대치품
IR2109(4) (S) & (PbF)
IN
SD
HO
LO
Figure 1. Input/Output Timing Diagram
IN(LO)
IN(HO)
ton
50%
tr
50%
toff
tf
90%
90%
LO
HO 10%
10%
Figure 2. Switching Time Waveform Definitions
SD
50%
tsd
HO 90%
LO
Figure 3. Shutdown Waveform Definitions
IN (LO)
IN (HO)
50%
50%
LO HO
10%
MT MT
90%
LO HO
Figure 5. Delay Matching Waveform Definitions
50%
IN
50%
90%
HO DTLO-HO 10%
LO 90%
DTHO-LO
MDT= DTLO-HO
10%
- DTHO-LO
Figure 4. Deadtime Waveform Definitions
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