Datasheet.kr   

BUK7K29-100E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7K29-100E
기능 Dual N-channel MOSFET
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고 



전체 13 페이지

		

No Preview Available !

BUK7K29-100E 데이터시트, 핀배열, 회로
BUK7K29-100E
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET
2 September 2015
Product data sheet
1. General description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to AEC
Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 5 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 29.5 A
- - 68 W
- 19.5 24.5 mΩ
- 13.1 - nC
Scan or click this QR code to view the latest information for this product




BUK7K29-100E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7K29-100E
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET
103
ID
(A)
102
Limit RDSon = VDS / ID
10
DC
tp = 10 us
100 us
003aak060
1
10-1
1
1 ms
10 ms
100 ms
10 102 103
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
IAL
(A)
10
1
10-1
003aak062
(1)
(2)
(3)
10-2
10-3
10-2
10-1
1
tAL (ms)
10
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Minimum footprint; mounted on a
printed circuit board
BUK7K29-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 September 2015
Min Typ Max Unit
- - 2.21 K/W
- 95 - K/W
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 13

4페이지










BUK7K29-100E 전자부품, 판매, 대치품
NXP Semiconductors
BUK7K29-100E
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET
100
RDSon
(mΩ)
80
60
003aak053
10-1
ID
(A)
10-2
10-3
003aah028
min typ max
40 10-4
20 10-5
0
0 5 10 15 20
VGS (V)
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
10-6
0246
VGS(V)
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
5
VGS(th)
(V)
4
003aah027
max
100
RDSon
(mΩ)
80
4V
003aak059
4.5 V
3 typ
60
2 min
5V
40
5.5 V
1 20
VGS = 10 V
0
-60 0 60 120 180
Tj (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
0
0 5 10 15 20 25 30
ID (A)
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7K29-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved
7 / 13

7페이지



구       성총 13 페이지
다운로드[ BUK7K29-100E.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BUK7K29-100E

Dual N-channel MOSFET

NXP Semiconductors
NXP Semiconductors

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵