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BUK7905-40AI PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7905-40AI
기능 N-channel TrenchPLUS standard level FET
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BUK7905-40AI 데이터시트, 핀배열, 회로
BUK7905-40AI
N-channel TrenchPLUS standard level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current
sensing. This product has been designed and qualified to the appropriate AEC standard
for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Reduced component count due to
integrated current sensor
„ Suitable for standard level gate drive
sources
1.3 Applications
„ Electrical Power Assisted Steering
(EPAS)
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 40 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 155 A
see Figure 2; see Figure 3;
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 50 A;
Tj = 25 °C; see Figure 7; see
Figure 8
-
4.5 5
m
ID/Isense ratio of drain current Tj > -55 °C; VGS > 10 V;
to sense current
Tj < 175 °C
450 500 550
[1] Current is limited by power dissipation chip rating.




BUK7905-40AI pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7905-40AI
N-channel TrenchPLUS standard level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
160
ID
(A)
120
03ng16
80
capped at 75A
due to package
40
0
0 50 100 150 200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
DC
03ng17
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7905-40AI_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7905-40AI 전자부품, 판매, 대치품
NXP Semiconductors
BUK7905-40AI
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; see
Figure 17
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
- 0.85 1.2 V
- 96 - ns
- 224 - nC
400
ID
(A) 10
300 20
8 7.5
200
100
0
024
03ni86
Label is VGS (V)
7
6.5
6
5.5
5
4.5
4
6 8 10
VDS (V)
12
RDSon
(mΩ)
8
03ni88
4
0
4 8 12 16 VGS (V) 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
RDSon
(mΩ)
15
VGS = 5.5 V 6 V
6.5 V 7 V
03ni87
10
5
0
0
8V
10 V
20 V
100 200 300 ID (A) 400
2.0
a
1.6
1.2
0.8
0.4
0
60
0
03ni30
60 120 180
Tj (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7905-40AI_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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