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부품번호 | AUIRLI2505 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
AUTOMOTIVE GRADE
PD - 97766
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rug-
gedized device design that HEXFET power
MOSFETs are well known for, provides the de-
signer with an extremely efficient and reliable de-
vice for use in Automotive and a wide variety of
other applications.
AUIRLI2505
HEXFET® Power MOSFET
V(BR)DSS
55V
RDS(on) max. 8.0m
ID 58A
S
D
G
TO-220AB Full-Pak
AUIRLI2505
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
chIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dhSingle Pulse Avalanche Energy (Thermally Limited)
chAvalanche Current
eRepetitive Avalanche Energy
ehPeak Diode Recovery dv/dt
TJ Operating Junction and
58
41
360
63
0.42
± 16
500
54
6.3
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRJC
Junction-to-Case
RJA Junction-to-Ambient
y y300
10 lbf in (1.1N m)
Typ.
–––
–––
Max.
2.4
65
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/14/12
AUIRLI2505
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AUIRLI2505 | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |