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PDF JHW10N60 Data sheet ( Hoja de datos )
| Número de pieza | JHW10N60 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Jin-ec Electronic | |
| Logotipo |  |
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Shanghai Jin-ec Electronic& Technology Co., Ltd
JHW10N60
主要参数 MAIN CHARACTERISTICS
封装 Package
N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
ID 9.5 A
VDSS 600 V
Rdson（@Vgs=10V） 0.75Ω
Qg 34 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 20pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 20pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
无卤素
Halogen
Free
包装
Packaging
器件重量
Device
Weight
J+:10N60CT-O-C-N-B J+:10N60CTTO-220C 否 NO 条管 Tube 2.15 g(typ)
J+:10N60FT-O-F-N-B J+:10N60FTTO-220MF否 NO 条管 Tube 2.20 g(typ)
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1 page  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JHW10N60
On-Region Characteristics
VGS
Top 15V
10V
9V
8V
7V
10 6.5V
6V
5.5V
Bottom 5V
Notes:
1 1. 250μs pulse test
2. TC=25℃
1 10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
0.90
0.85 VGS=10V
0.80
0.75
0.70 VGS=20V
0.65 Note :Tj=25 ℃
0.60
0 2 4 6 8 10 12 14 16
ID [A]
Capacitance Characteristics
18
Transfer Characteristics
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
1 150 ℃
25 ℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD [V]
Gate Charge Characteristics
12
VDS=480V
10 VDS=300V
8 VDS=120V
6
4
2
0
0 10 20 30
Qg Toltal Gate Charge [nC]
40
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet JHW10N60.PDF ] | |
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