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Número de pieza | F60UP20DN | |
Descripción | Common Cathode Fast Recovery Epitaxial Diode | |
Fabricantes | Thinki Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de F60UP20DN (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! F60UP20DN
®
F60UP20DN
Pb
Pb Free Plating Product
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3PB/TO-3PN
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
—
Anode
Cathode
Anode
GENERAL DESCRIPTION
F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR Maximum D.C. Reverse Voltage
200 V
V RRM
Maximum Repetitive Reverse Voltage
200 V
I F(AV)
Average Forward Current
TC=100°C, Per Diode
TC=100°C, Per Package
30 A
60 A
I F(RMS)
I FSM
RMS Forward Current
Non-Repetitive Surge Forward Current
TC=100°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
53
300
A
A
PD Power Dissipation
156 W
TJ Junction Temperature
-40 to +150
°C
T STG
Torque
Storage Temperature Range
Module-to-Sink
Recommended(M3)
-40 to +150
1.1
°C
N·m
R θJC
Thermal Resistance
Weight
ELECTRICAL CHARACTERISTICS
Junction-to-Case
0.8 °C /W
6.0 g
TC=25°C unless otherwise specified
Symbol
Parameter
IRM Reverse Leakage Current
Test Conditions
VR=200V
VR=200V, TJ=125°C
Min. Typ. Max.
-- -- 25
-- -- 250
Unit
µA
µA
VF Forward Voltage
I F =30A
IF=30A, TJ=125°C
-- 0.86 1.1
-- -- 0.95
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=100V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 26 --
-- 2.3 --
ns
A
trr Reverse Recovery Time
VR=100V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 40 --
-- 4.1 --
ns
A
Rev.05
Page 1/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet F60UP20DN.PDF ] |
Número de pieza | Descripción | Fabricantes |
F60UP20DN | Common Cathode Fast Recovery Epitaxial Diode | Thinki Semiconductor |
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