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PDF SUD50N025-05P Data sheet ( Hoja de datos )
| Número de pieza | SUD50N025-05P | |
| Descripción | N-Channel 25-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V
0.0076 @ VGS = 4.5 V
ID (A)a, e
89
80
Qg (Typ)
30 nC
TO-252
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D RoHS Compliant
APPLICATIONS
D DC/DC Conversion, Low-Side
− Desktop PC
− Notebook PC
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
TC = 25_C
TA = 25_C
L = 0.1 mH
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25
"20
89a, e
80a, e
36b, c
30b, c
100
55
7.7b, c
45
101
83a
58a
11.5b, c
8.0b, c
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case
t p 10 sec
Steady State
RthJA
RthJC
Notes:
a. Based on TC = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 90 _C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73362
S-50935—Rev. A, 08-May-05
Typical
10
1.5
Maximum
13
1.8
Unit
_C/W
www.vishay.com
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New Product
SUD50N025-05P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating*
100
90
80
60
40
Package Limited
20
75
60
45
30
15
0
0 25 50 75 100 125 150 175
TC − Case Temperature (_C)
0
25
Power De-Rating
50 75 100 125 150
TC − Case Temperature (_C)
175
1000
Single Pulse Avalanche Capability
100
10
1
TA
+
L@
BV *
ID
VDD
0.1
0.00001 0.0001
0.001
0.01
0.1
TA − Time In Avalanche (sec)
1
*The power dissipation PD is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73362
S-50935—Rev. A, 08-May-05
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUD50N025-05P.PDF ] | |
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