|
|
PDF CS4N65A4D Data sheet ( Hoja de datos )
| Número de pieza | CS4N65A4D | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | HUAJING | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CS4N65A4D (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS4N65 A4D
General Description：
CS4N65 A4D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC)
l Low Reverse transfer capacitances(Typical: 8.5pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
650
4
75
2
Rating
650
4
3.2
16
±30
150
30
2.5
5.0
75
0.60
3000
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012
1 page  
Huajing Discrete Devices
○R CS4N65 A4D
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
1
1.00E-05
1.00E-04
9
PULSE DURATION = 10μs
7.5 DUTY CYCLE = 0.5%MAX
VDS=30V
1.00E-03
1.00E-02
t ，Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
6
5
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
6
4.5
3 -55℃
+25℃
1.5
+150℃
4
ID= 4A
3 ID= 2A
ID= 1A
2
1
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
3
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
2.5
0
6 4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
1.75
2
VGS=20V
1.5
1.25
1.5 1
0.75
1
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS4N65A4D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CS4N65A4D | Silicon N-Channel Power MOSFET | HUAJING |
| CS4N65A4HDY | Silicon N-Channel Power MOSFET |  Huajing Microelectronics |
| CS4N65A4R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
| CS4N65A4TDY | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |