Datasheet.kr   

PM75CL1A060 데이터시트 PDF




Mitsubishi Electric Semiconductor에서 제조한 전자 부품 PM75CL1A060은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 PM75CL1A060 자료 제공

부품번호 PM75CL1A060 기능
기능 INTELLIGENT POWER MODULES
제조업체 Mitsubishi Electric Semiconductor
로고 Mitsubishi Electric Semiconductor 로고


PM75CL1A060 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 9 페이지수

미리보기를 사용할 수 없습니다

PM75CL1A060 데이터시트, 핀배열, 회로
PM75CL1A060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1A060
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
Inverter + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBTTM chip
b) The over-temperature protection which detects the chip sur-
face temperature of CSTBTTM is adopted.
c) Error output signal is possible from all each protection up-
per and lower arm of IPM.
d) Compatible L-series package.
• 3φ 75A, 600V Current-sense and temperature sense
IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-FO available
from upper arm devices)
• UL Recognized
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
11 120
7 106
19.75
66.5
(19.75)
3.25
16
16
16 15.25
3-2 3-2 3-2 6-2
2-φ5.5
MOUNTING HOLES
16
3
1 5 9 13 19
6-M5 NUTS
B
10.75
32.75
UV
23 23
19-0.5
W
12
23
1
22
+
1
0.5
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. WN
19. Fo
May 2009




PM75CL1A060 pdf, 반도체, 판매, 대치품
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1A060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Symbol
ID
Vth(ON)
Vth(OFF)
SC
toff(SC)
OT
OT(hys)
UV
UVr
IFO(H)
IFO(L)
tFO
Parameter
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
Condition
VD = 15V, VCIN = 15V
VN1-VNC
V*P1-V*PC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
–20 Tj 125°C, VD = 15V
(Fig. 3,6)
VD = 15V
(Fig. 3,6)
Detect Temperature of IGBT chip
–20 Tj 125°C
Trip level
Hysteresis
Trip level
Reset level
VD = 15V, VCIN = 15V
(Note-2)
VD = 15V
(Note-2)
Min.
1.2
1.7
150
135
11.5
1.0
Limits
Typ.
6
2
1.5
2.0
0.2
20
12.0
12.5
10
1.8
Max.
12
4
1.8
2.3
12.5
0.01
15
Unit
mA
V
A
µs
°C
V
mA
ms
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
Parameter
— Mounting torque
— Weight
Mounting part
Main terminal part
Condition
Limits
Min.
Typ.
Unit
Max.
screw : M5
2.5
3.0
3.5
screw : M5
2.5
3.0
3.5 N • m
— 380 — g
RECOMMENDED CONDITIONS FOR USE
Symbol
Parameter
VCC Supply Voltage
VD Control Supply Voltage
VCIN(ON)
VCIN(OFF)
fPWM
tdead
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through Blocking
Time
Condition
Applied across P-N terminals
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
(Note-3)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Using Application Circuit of Fig. 8
For IPM’s each input signals
(Fig. 7)
Recommended value
400
15.0 ± 1.5
0.8
9.0
20
2.0
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation 2V peak to peak
≤ ± 5V/µs
2V
15V
GND
Unit
V
V
V
kHz
µs
May 2009
4

4페이지










PM75CL1A060 전자부품, 판매, 대치품
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj = 25°C
90
80
70
15V
VD = 17V
60 13V
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
12
IC = 75A
Tj = 25°C
Tj = 125°C
13 14 15 16 17 18
CONTROL VOLTAGE VD (V)
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1A060
FLAT-BASE TYPE
INSULATED PACKAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
2.0
VD = 15V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Tj = 25°C
Tj = 125°C
20 40 60 80 100
COLLECTOR CURRENT IC (A)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
103
7 VD = 15V
5
3
2
102
7
5
3
2
101
7
5
3
2
100 0
Tj = 25°C
Tj = 125°C
0.5 1.0 1.5 2.0 2.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
SWITCHING TIME (ton, toff) CHARACTERISTICS
(TYPICAL)
101
7
VCC = 300V
VD = 15V
5
4
Tj = 25°C
3 Tj = 125°C
Inductive load
2
100 toff
7
5 ton
4
3
2
10–1
100 2 3 4 5 7 101 2 3 4 5 7 102
COLLECTOR CURRENT IC (A)
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL)
100
7
5
4 tc(off)
3
2
tc(on)
10–1
7
5
4
3
2
10–2
100
tc(off)
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
2 3 4 5 7 101 2 3 4 5 7 102
COLLECTOR CURRENT IC (A)
May 2009
7

7페이지


구       성 총 9 페이지수
다운로드[ PM75CL1A060.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
PM75CL1A060

INTELLIGENT POWER MODULES

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵