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PDF STD45N10F7 Data sheet ( Hoja de datos )
| Número de pieza | STD45N10F7 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD45N10F7, STI45N10F7,
STP45N10F7
N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™
Power MOSFETs in DPAK, I2PAK and TO-220 packages
Datasheet - production data
TAB
3
1
DPAK
TAB
TAB
123
I2PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
Features
Order codes
STD45N10F7
STI45N10F7
STP45N10F7
VDS
RDS(on)
max.(1)
100 V 0.018 Ω
1. @ VGS = 10 V
• Ultra low on-resistance
• 100% avalanche tested
ID
45 A
PTOT
60 W
Applications
• Switching applications
Description
These devices utilize the 7th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
3
!-V
Order codes
STD45N10F7
STI45N10F7
STP45N10F7
Table 1. Device summary
Marking
Package
45N10F7
DPAK
I2PAK
TO-220
Packaging
Tape and reel
Tube
October 2013
This is information on a product in full production.
DocID024455 Rev 1
1/19
www.st.com
1 page  
STD45N10F7, STI45N10F7, STP45N10F7
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 45 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45 A,
di/dt = 100 A/µs,
VDD = 80 V, Tj = 150 °C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%.
-
-
-
-
-
-
45 A
180 A
1.1 V
53 ns
67 nC
2.5 A
DocID024455 Rev 1
5/19
19
5 Page 
STD45N10F7, STI45N10F7, STP45N10F7
Package mechanical data
Figure 19. DPAK (TO-252) type A drawing
DocID024455 Rev 1
0068772_L_type_A
11/19
19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet STD45N10F7.PDF ] | |
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