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부품번호 | HM12N60F 기능 |
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기능 | 600V N-Channel MOSFET | ||
제조업체 | H&M Semiconductor | ||
로고 | |||
HM12N60 / HM12N60F
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using SL semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲
{G ●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
HM12N60
HM12N60F
600
12.0 12.0*
7.4 7.4*
48 48 *
± 30
865
23.1
4.5
231 54
1.85 0.43
-55 to +150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
HM12N60
0.54
0.5
62.5
HM12N60F
2.33
--
62.5
Units
°C/W
°C/W
°C/W
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for HM12N60
Figure 9-2. Maximum Safe Operating Area
for HM12N60F
Figure 10. Maximum Drain Current
vs Case Temperature
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
4페이지 Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
S am e T ype
as D U T
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
I SD
(DUT )
V DS
(DUT )
D
=
- -G- - a- -t-e- - -P- -u- l-s- e- - -W- - -i -d- t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HM12N60F.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HM12N60 | 600V N-Channel MOSFET | H&M Semiconductor |
HM12N60F | 600V N-Channel MOSFET | H&M Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |