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CEK01N7 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 CEK01N7
기능 N-Channel Enhancement Mode Field Effect Transistor
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CEK01N7 데이터시트, 핀배열, 회로
CEK01N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 0.3A, RDS(ON) = 18 @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S
TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 700
VGS ±30
Drain Current-Continuous
Drain Current-Pulsed a
ID 0.3
IDM 1.2
Maximum Power Dissipation
PD 3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Leadb
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.June.
http://www.cet-mos.com




CEK01N7 pdf, 반도체, 판매, 대치품
10 VDS=480V
ID=0.3A
8
6
4
2
0
0 2 4 6 8 10 12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
VIN RL
D VOUT
VGS
RGEN G
S
CEK01N7
101
RDS(ON)Limit
100 1ms
10ms
10-1
100ms
1s
DC
10-2
TA=25 C
TJ=150 C
10-3
Single
100
Pulse
101
102
103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
6
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
100
D=0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
101
102
Figure 11. Normalized Thermal Transient Impedance Curve
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